CORC

浏览/检索结果: 共26条,第1-10条 帮助

限定条件                
已选(0)清除 条数/页:   排序方式:
Low defect thick homoepitaxial layers grown on 4H-SiC wafers for 6500 V JBS devices 会议论文
Asia-Pacific Conference on Silicon Carbide and Related Materials, APCSCRM 2018, Beijing, China, 2018-07-09
作者:  Niu, Yingxi;  Tang, Xiaoyan;  Tian, Lixin;  Zheng, Liu;  Zhang, Wenting
收藏  |  浏览/下载:8/0  |  提交时间:2019/12/20
Influence of p(-) blocking base carrier lifetime on characteristics of SiC light-triggered thyristor 会议论文
2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019-01-01
作者:  An, Liqi;  Pu, Hongbin;  Wang, Xi;  Tang, Xinyu;  Liu, Qing
收藏  |  浏览/下载:5/0  |  提交时间:2019/12/20
Review of SiC MOSFET Drive Circuit 会议论文
2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019-01-01
作者:  Liu, Yang;  Yang, Yuan
收藏  |  浏览/下载:3/0  |  提交时间:2019/12/20
A Novel High Power 4H-SiC Unipolar Diode with Advanced Performance 会议论文
2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019-01-01
作者:  Wang, Xi;  Pu, Hongbin;  An, Liqi
收藏  |  浏览/下载:5/0  |  提交时间:2019/12/20
A Novel Active Gate Driver for Improving Switching Performance of High-Power SiC MOSFET Modules 期刊论文
2019, 卷号: 34, 页码: 7775-7787
作者:  Yang, Yuan;  Wen, Yang;  Gao, Yong
收藏  |  浏览/下载:12/0  |  提交时间:2019/12/20
An Active Gate Driver for Improving Switching Performance of SiC MOSFET 会议论文
2018 7TH IEEE INTERNATIONAL SYMPOSIUM ON NEXT-GENERATION ELECTRONICS (ISNE), 2018-01-01
作者:  Yang, Yuan;  Wang, Yan;  Wen, Yang
收藏  |  浏览/下载:4/0  |  提交时间:2019/12/20
4H-SiC Light Triggered Thyristor with Gradually Doped Thin n-base 会议论文
2018 1ST WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA), 2018-01-01
作者:  
收藏  |  浏览/下载:3/0  |  提交时间:2019/12/20
Origin analysis and elimination of obtuse triangular defects in 4° off 4H-SiC epitaxy 会议论文
International Conference on Silicon Carbide and Related Materials, ICSCRM 2017, Columbia, WA, United states, 2017-09-17
作者:  Mao, K.L.;  Wang, Y.M.;  Li, B.;  Zhao, G.Y.
收藏  |  浏览/下载:5/0  |  提交时间:2019/12/20
Shortening turn-on delay of SiC light triggered thyristor by 7-shaped thin n-base doping profile 期刊论文
2018, 卷号: 27
作者:  Wang, Xi;  Pu, Hong-Bin;  Liu, Qing;  An, Li-Qi
收藏  |  浏览/下载:4/0  |  提交时间:2019/12/20
Atomistic insights on the nanoscale single grain scratching mechanism of silicon carbide ceramic based on molecular dynamics simulation 期刊论文
2018, 卷号: 8
作者:  Liu, Yao;  Li, Beizhi;  Kong, Lingfei
收藏  |  浏览/下载:2/0  |  提交时间:2019/12/20


©版权所有 ©2017 CSpace - Powered by CSpace