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Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer 期刊论文
applied physics letters, 2013, 卷号: 102, 期号: 1, 页码: 011105
Li, Hongjian; Kang, Junjie; Li, Panpan; Ma, Jun; Wang, Hui; Liang, Meng; Li, Zhicong; Li, Jing; Yi, Xiaoyan; Wang, Guohong
收藏  |  浏览/下载:12/0  |  提交时间:2013/10/08
Analysis Model for Efficiency Droop of InGaN Light-Emitting Diodes Based on Reduced Effective Volume of Active Region by Carrier Localization 期刊论文
applied physics express, 2013, 卷号: 6, 期号: 9, 页码: 092101
Hongjian Li, Panpan Li, Junjie Kang, Zhi Li, Yiyun Zhang, Meng Liang, Zhicong Li, Jing Li, Xiaoyan Yi and Guohong Wang
收藏  |  浏览/下载:12/0  |  提交时间:2014/04/09
Improved ESD characteristic of GaN-based blue light-emitting diodes with a low temperature n-type GaN insertion layer 期刊论文
journal of semiconductors, 2012, 卷号: 33, 期号: 10, 页码: 104002
Li, Panpan; Li, Hongjian; Zhang, Yiyun; Li, Zhicong; Liang, Meng; Li, Jing; Wang, Guohong
收藏  |  浏览/下载:14/0  |  提交时间:2013/05/07
Low threading dislocation density in GaN films grown on patterned sapphire substrates 期刊论文
journal of semiconductors, 2012, 卷号: 33, 期号: 11, 页码: 113002
Liang, Meng; Wang, Guohong; Li, Hongjian; Li, Zhicong; Yao, Ran; Wang, Bing; Li, Panpan; Li, Jing; Yi, Xiaoyan; Wang, Junxi; Li, Jinmin
收藏  |  浏览/下载:12/0  |  提交时间:2013/05/07
Diode-end-pumped passively CW mode-locked Nd : YLF laser by the LT-In0.25Ga0.75As absorber 期刊论文
ieee journal of quantum electronics, 2006, 卷号: 42, 期号: 9-10, 页码: 1097-1100
Pan SD (Pan Shu-Di); He JL (He Jing-Liang); Hou YE (Hou Yu-E); Fan YX (Fan Ya-Xian); Wang HT (Wang Hui-Tian); Wang YG (Wang Yong-Gang); Ma XY (Ma Xiao-Yu)
收藏  |  浏览/下载:46/0  |  提交时间:2010/04/11


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