Low threading dislocation density in GaN films grown on patterned sapphire substrates

	Low threading dislocation density in GaN films grown on patterned sapphire substrates
	Liang, Meng ; Wang, Guohong ; Li, Hongjian ; Li, Zhicong ; Yao, Ran ; Wang, Bing ; Li, Panpan ; Li, Jing ; Yi, Xiaoyan ; Wang, Junxi ; Li, Jinmin
刊名	journal of semiconductors
	2012
卷号	33 期号:11 页码:113002
学科主题	半导体器件
收录类别	EI
公开日期	2013-05-07
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23977]
专题	半导体研究所_中科院半导体照明研发中心
推荐引用方式 GB/T 7714	Liang, Meng,Wang, Guohong,Li, Hongjian,et al. Low threading dislocation density in GaN films grown on patterned sapphire substrates[J]. journal of semiconductors,2012,33(11):113002.
APA	Liang, Meng.,Wang, Guohong.,Li, Hongjian.,Li, Zhicong.,Yao, Ran.,...&Li, Jinmin.(2012).Low threading dislocation density in GaN films grown on patterned sapphire substrates.journal of semiconductors,33(11),113002.
MLA	Liang, Meng,et al."Low threading dislocation density in GaN films grown on patterned sapphire substrates".journal of semiconductors 33.11(2012):113002.