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浏览/检索结果: 共14条，第1-10条 帮助 限定条件 发表日期：2005     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Time-resolved photoluminescence of sub-monolayer ingaas/gaas quantum-dot-quantum-well heterostructures 期刊论文 Acta physica sinica, 2005, 卷号: 54, 期号: 11, 页码: 5367-5371 作者:  Xu, ZC;  Jia, GZ;  Sun, L;  Yao, JH;  Xu, JJ 收藏  |  浏览/下载：19/0  |  提交时间：2019/05/12 Sub-monolayer  Quantum-dot-quantum-well  Time-resolved photoluminescence   Interference and non-interference of sidebands in a quantum dot with oscillating levels 期刊论文 Superlattices and microstructures, 2005, 卷号: 38, 期号: 2, 页码: 115-121 作者:  Pan, LX;  Yang, M;  Li, SS 收藏  |  浏览/下载：22/0  |  提交时间：2019/05/12 Quantum dot  Interference  Sideband  Green's function  Bi-unitary transform   Photoluminescence of low-dimensional semiconductor structures under pressure 期刊论文 Journal of infrared and millimeter waves, 2005, 卷号: 24, 期号: 3, 页码: 174-178 作者:  Li, GH;  Chen, Y;  Fang, ZL;  Ma, BS;  Su, FH 收藏  |  浏览/下载：18/0  |  提交时间：2019/05/12 Pressure  Photoluminescence  Quantum dot  Nanoparticle   Research progress of electronic properties of self-assembled semiconductor quantum dots 期刊论文 Acta metallurgica sinica, 2005, 卷号: 41, 期号: 5, 页码: 463-470 作者:  Sun, J;  Jin, P;  Wang, ZG 收藏  |  浏览/下载：18/0  |  提交时间：2019/05/12 Self-assembled semiconductor quantum dot  Quantum size effect  Nanoelectronic device   Excitonic energy of vertically stacked self-assmbled inas quantum dots 期刊论文 Acta physica sinica, 2005, 卷号: 54, 期号: 4, 页码: 1794-1798 作者:  Dong, QR;  Niu, ZC 收藏  |  浏览/下载：15/0  |  提交时间：2019/05/12 Quantum dot  Exciton  Diagonalization   The phase of Fano resonance in Aharonov-Bohm interferometer with a quantum dot embedded 期刊论文 PHYSICA B-CONDENSED MATTER, 2005, 卷号: 355, 页码: 216-221 作者:  Xiong, YJ;  Liang, XT 收藏  |  浏览/下载：6/0  |  提交时间：2018/05/31 Aharonov-Bohm interferometer  quantum dot  Fano resonance  phase   Formation and characteristics of quantum dots of wide band gap II-VI semiconductor (EI CONFERENCE) 会议论文 Fifth International Conference on Thin Film Physics and Applications, May 31, 2004 - June 2, 2004, Shanghai, China Fan X. W.; Shan C. X.; Yang Y.; Zhang J. Y.; Liu Y. C.; Lu Y. M.; Shen D. Z. 收藏  |  浏览/下载：19/0  |  提交时间：2013/03/25 CdSe and ZnCdSe quantum dots (QDs) were grown under Stranski-Krastanow (S-K) mode by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The formation process of CdSe QDs below critical thickness was observed by atomic force microscopy (AFM). The formation mechanism of CdSe QDs below the critical thickness was due to the effect of surface diffusion and strain release. ZnCdSe QDs were grown based on the calculated critical thickness. Two kinds of variations in the ZnCdSe QDs appeared over time  the Ostwald ripening process and dot formation process. ZnSeS dots were grown under Volmer-Weber (V-W) mode. With increasing the growth duration  the size of dots becomes larger and the density decreases  which is explained by virtue of the surface free energy.   Controlled growth of iii-v compound semiconductor nano-structures and their application in quantum-devices 期刊论文 Pricm 5: the fifth pacific rim international conference on advanced materials and processing, pts 1-5, 2005, 卷号: 475-479, 页码: 1783-1786 作者:  Xu, B;  Wang, ZG;  Chen, YH;  Jin, R;  Ye, XL 收藏  |  浏览/下载：13/0  |  提交时间：2019/05/12 Quantum dot  Quantum-dot laser  Self-assembled   Interband and intraband photocurrent of self-assembled InAs/InAlAs/InP nanostructures 期刊论文 nanotechnology, 2005, 卷号: 16, 期号: 12, 页码: 2785-2789 作者:  Jin P;  Xu B 收藏  |  浏览/下载：55/0  |  提交时间：2010/04/11 DOT INFRARED PHOTODETECTORS  INAS/GAAS QUANTUM DOTS  ROOM-TEMPERATURE  SPECTROSCOPY  PHOTOCONDUCTIVITY  HETEROSTRUCTURES  TRANSITIONS  LASERS  WELLS  INP   Interference and non-interference of sidebands in a quantum dot with oscillating levels 期刊论文 superlattices and microstructures, 2005, 卷号: 38, 期号: 2, 页码: 115-121 Pan, LX; Yang, M; Li, SS 收藏  |  浏览/下载：40/17  |  提交时间：2010/03/17 quantum dot