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	Formation and characteristics of quantum dots of wide band gap II-VI semiconductor (EI CONFERENCE)
	Fan X. W. ; Shan C. X. ; Yang Y. ; Zhang J. Y. ; Liu Y. C. ; Lu Y. M. ; Shen D. Z.
	2005
会议名称	Fifth International Conference on Thin Film Physics and Applications, May 31, 2004 - June 2, 2004
会议地点	Shanghai, China
关键词	CdSe and ZnCdSe quantum dots (QDs) were grown under Stranski-Krastanow (S-K) mode by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The formation process of CdSe QDs below critical thickness was observed by atomic force microscopy (AFM). The formation mechanism of CdSe QDs below the critical thickness was due to the effect of surface diffusion and strain release. ZnCdSe QDs were grown based on the calculated critical thickness. Two kinds of variations in the ZnCdSe QDs appeared over time the Ostwald ripening process and dot formation process. ZnSeS dots were grown under Volmer-Weber (V-W) mode. With increasing the growth duration the size of dots becomes larger and the density decreases which is explained by virtue of the surface free energy.
页码	34-38
收录类别	EI
内容类型	会议论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/33290]
专题	长春光学精密机械与物理研究所_中科院长春光机所知识产出_会议论文
推荐引用方式 GB/T 7714	Fan X. W.,Shan C. X.,Yang Y.,et al. Formation and characteristics of quantum dots of wide band gap II-VI semiconductor (EI CONFERENCE)[C]. 见:Fifth International Conference on Thin Film Physics and Applications, May 31, 2004 - June 2, 2004. Shanghai, China.

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