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西安理工大学 [7]
北京航空航天大学 [5]
北京大学 [3]
清华大学 [1]
近代物理研究所 [1]
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期刊论文 [9]
会议论文 [8]
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2020 [1]
2019 [6]
2018 [2]
2016 [5]
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浏览/检索结果:
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Evaluation Method of Heavy-Ion-Induced Single-Event Upset in 3D-Stacked SRAMs
期刊论文
ELECTRONICS, 2020, 卷号: 9, 期号: 8, 页码: 14
作者:
Zhao, Peixiong
;
Liu, Tianqi
;
Cai, Chang
;
He, Ze
;
Li, Dongqing
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2021/12/15
Monte-Carlo simulation
single-event upset
test standard
three-dimensional integrated circuits
ultrahigh-energy heavy ion
Fabrication and measurement of 3D LPF based on coaxial TSV
期刊论文
2019, 卷号: 55, 页码: 102-+
作者:
Wang, Fengjuan
;
Li, He
;
Yu, Ningmei
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2019/12/20
finite element analysis
three-dimensional integrated circuits
low-pass filters
passive filters
CMOS integrated circuits
standard CMOS process
3D LPF architecture
coaxial TSV
passive low-pass filters
3D LPF measurement
3D LPF fabrication
through-silicon via
finite element method
LC Low-pass filter based on through-silicon via
会议论文
2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019-01-01
作者:
Wang, Fengjuan
;
Huang, Jia
;
Yu, Ningmei
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/12/20
low-pass filter
through-silicon via (TSV)
three-dimensional integrated circuits (3-D IC)
A highly efficient heat-dissipation system using RDL and TTSV array in 3D IC
会议论文
2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019-01-01
作者:
Wang, Fengjuan
;
Li, Yue
;
Yu, Ningmei
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2019/12/20
three-dimensional integrated circuits (3-D IC)
thermal through-silicon via (TTSV)
redistribution layer (RDL)
heat-dissipation
An Effective Method of Reducing TSV Thermal Stress by STI
会议论文
2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019-01-01
作者:
Wang, Fengjuan
;
Qu, Xiaoqing
;
Yu, Ningmei
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/20
Keywords Three-dimensional integrated circuits (3-D IC)
through-silicon via (TSV)
shallow trench isolation (STI)
thermal stress
keep-out zone (KOZ)
Development of an infrared polarized microscope for evaluation of high gradient stress with a small distribution area on a silicon chip
期刊论文
REVIEW OF SCIENTIFIC INSTRUMENTS, 2019, 卷号: 90, 页码: 063108
作者:
Su, Fei
;
Li, Tenghui
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2019/12/30
Birefringence
Electronics packaging
Light polarization
Optical devices
Silicon
Thermal cycling
Three dimensional integrated circuits
Distribution area
High gradient stress
Phase difference
Phase-shifting technique
Polarized microscope
Quarter wave-plate
Stress birefringence
Through silicon vias
Vibrations (mechanical)
Mechanically strengthened graphene-Cu composite with reduced thermal expansion towards interconnect applications
期刊论文
MICROSYSTEMS & NANOENGINEERING, 2019, 卷号: 5, 页码: 20
作者:
An, Zhonglie
;
Li, Jinhua
;
Kikuchi, Akio
;
Wang, Zhuqing
;
Jiang, Yonggang
收藏
  |  
浏览/下载:101/0
  |  
提交时间:2019/12/30
Copper compounds
Electronics packaging
Graphene
Integration
Mechanical properties
MEMS
Natural frequencies
Thermal expansion
Three dimensional integrated circuits
Coefficients of thermal expansions
Composite microstructures
Interconnect applications
Laser Doppler vibrometers
Mechanical resonant frequencies
Micro electro mechanical system
Thermal expansion mismatch
Through-Silicon-Via (TSV)
Integrated circuit interconnects
A low-pass filter made up of the cylindrical through-silicon-via
会议论文
2018 19TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT), 2018-01-01
作者:
Wang, Fengjuan
;
Huang, Jia
;
Yu, Ningmei
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/12/20
Three-dimensional integrated circuits (3D IC)
through-silicon-via (TSV)
low-pass filter
Development of Auto Infrared Photoelastic Microscope for Stress Measurement of Silicon
会议论文
Proceedings - 2018 19th International Conference on Electronic Packaging Technology, ICEPT 2018
作者:
Li, T.
;
Yao, R.
;
Yu, C.
;
Su, F.
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/30
Cracks
Elasticity
Electronics packaging
Light polarization
Microscopes
Optical devices
Silicon carbide
Silicon wafers
Stresses
Wafer bonding
Wide band gap semiconductors
Electronic Packaging
Heating platform
Phase difference
Quarter wave-plate
Si-based materials
Silicon-based materials
Stress birefringence
Temperature cycling tests
Three dimensional integrated circuits
Fine-pitch through-silicon via integration with self-aligned back-side benzocyclobutene passivation layer
期刊论文
MICRO & NANO LETTERS, 2016
Guan, Yong
;
Ma, Shenglin
;
Zeng, Qinghua
;
Chen, Jing
;
Jin, Yufeng
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2017/12/03
three-dimensional integrated circuits
passivation
organic compounds
sputter etching
chemical mechanical polishing
radiography
optical microscopy
scanning electron microscopy
vector network analyser
four probe electrical measurement
scanning electron microscopy
optical microscopy
X-ray radiographic testing
repeatability
chemical mechanical polishing
plasma etching
back side benzocyclobutene passivation layer
self aligned benzocyclobutene passivation layer
fine pitch thr
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