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浏览/检索结果: 共4条，第1-4条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 The total ionizing dose effect on SiO2 and new high-k gate dielectrics under gamma-ray irradiation 会议论文 作者:  Ding, Man;  Cheng, Yonghong 收藏  |  浏览/下载：13/0  |  提交时间：2019/11/19 Equivalent oxide thickness  Gamma irradiation  Gamma-ray irradiation  Interface trapped charges  Silicon dangling bond  Thermally oxidized  Total ionizing dose effects  Trapping efficiencies   Total Dose Effects and Bias Instabilities of (NH4)(2)S Passivated Ge MOS Capacitors With HfxZr1-xOy Thin Films 期刊论文 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2017, 卷号: 64, 页码: 2913-2921 作者:  Mu, Yifei;  Fang, Yuxiao;  Zhao, Ce Zhou;  Zhao, Chun;  Lu, Qifeng 收藏  |  浏览/下载：3/0  |  提交时间：2019/11/26 germanium  HfxZr1-xOy  interface traps  total dose effect  oxide trapped charges   Total Ionizing Dose Response of Hafnium-Oxide Based MOS Devices to Low-Dose-Rate Gamma Ray Radiation Observed by Pulse CV and On-Site Measurements 期刊论文 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2017, 卷号: 64, 页码: 673-682 作者:  Mu, Yifei;  Zhao, Ce Zhou;  Lu, Qifeng;  Zhao, Chun;  Qi, Yanfei 收藏  |  浏览/下载：4/0  |  提交时间：2019/11/26 gamma irradiation  ALD  hafnium oxide  low-dose-rate  oxide trapped charges  pulse CV   A new charge-pumping measurement technique for lateral profiling of interface states and oxide charges in MOSFETs 其他 2001-01-01 Liang, Y; Zhao, W; Xu, MZ; Tan, CH 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/13 charge-pumping  HCI degradation  lateral profiling  interface states  oxide charge  TRAPPED CHARGES  DISTRIBUTIONS