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Synergistic influence of micropore architecture and TiO2 coating on the microwave absorption properties of Co nanoparticles 期刊论文
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2019, 卷号: 30, 页码: 5620-5630
作者:  Liao, Haoyan;  Pang, Yu;  Li, Da;  Liu, Tong
收藏  |  浏览/下载：19/0  |  提交时间：2019/12/30
High-k Spacer Consideration of Ultrascaled Gate-All-Around Junctionless Transistor in Ballistic Regime 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 12, 页码: 5282-5288
作者:  Yang YM(杨育梅)
收藏  |  浏览/下载：9/0  |  提交时间：2020/11/13
Investigation of Mo-, Pt-, and Rh-doped rutile TiO2 based on first-principles calculations 期刊论文
AIP ADVANCES, 2018, 卷号: 8, 期号: 7
作者:  Lu, Xuefeng;  Zhao, Tingting;  Gao, Xu;  Ren, Junqiang;  Yan, Xiaobin
收藏  |  浏览/下载：11/0  |  提交时间：2019/11/15
Interface Engineering of Ge-based Nanoelectronics Using Fluorinated Graphene 会议论文
2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
作者:  Zheng, X.;  Zhang, M.;  Shi, X.;  Wang, G.;  Zheng, L.
收藏  |  浏览/下载：8/0  |  提交时间：2019/12/30
Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 716, 期号: 无, 页码: 1-6
作者:  He, Gang;  Jiang, Shanshan;  Li, Wendong;  Zheng, Changyong;  He, Huaxin
收藏  |  浏览/下载：40/0  |  提交时间：2018/05/25
In situ study on the thermal stability and interfaces properties of er2o3/al2o3/si multi stacked films by x-ray photoelectron spectroscopy 期刊论文
Superlattices and microstructures, 2017, 卷号: 104, 页码: 415-421
作者:  Gao, Baolong;  Mamat, Mamatrishat;  Ghupur, Yasenjan;  Ablat, Abduleziz;  Ibrahim, Kurash
收藏  |  浏览/下载：34/0  |  提交时间：2019/04/23
Modulation of interfacial and electrical properties of ALD-derived HfAlO/Al2O3/Si gate stack by annealing temperature 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 691, 期号: 无, 页码: 504-513
作者:  Gao, J.;  He, G.;  Liu, M.;  Lv, J. G.;  Sun, Z. Q.
收藏  |  浏览/下载：19/0  |  提交时间：2017/11/21
In situ study on the thermal stability and interfaces properties of Er2O3/Al2O3/Si multi stacked films by X-ray photoelectron spectroscopy 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2017, 卷号: 104, 页码: 415-421
作者:  Ablat, A;  Ibrahim, K;  Wang, JO;  Liu, C;  Zhao, JL
收藏  |  浏览/下载：18/0  |  提交时间：2019/08/27
Annealing Temperature Dependent Electrical Properties and Leakage Current Transport Mechanisms in Atomic Layer Deposition-Derived Al2O3-Incorporated HfO2/Si Gate Stack 期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2016, 卷号: 16, 期号: 8, 页码: 8075-8082
作者:  Gao, Juan;  He, Gang;  Zhang, Jiwen;  Chen, Xuefei;  Jin, Peng
收藏  |  浏览/下载：22/0  |  提交时间：2017/11/21
Modification of electrical properties and carrier transportation mechanism of ALD-derived HfO2/Si gate stacks by Al2O3 incorporation 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 667, 期号: 无, 页码: 352-358
作者:  Gao, Juan;  He, Gang;  Sun, Zhaoqi;  Chen, Hanshuang;  Zheng, Changyong
收藏  |  浏览/下载：21/0  |  提交时间：2017/10/18

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