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浏览/检索结果: 共4条，第1-4条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Interaction of alpha radiation with iron-doped n-type silicon 期刊论文 MICROELECTRONICS JOURNAL, 2008, 卷号: 39, 页码: 797-801 作者:  Khizar-ul-Haq[1];  Khan, M. A.[2];  Qurashi, U. S.[3];  Majid, Abdul[4] 收藏  |  浏览/下载：3/0  |  提交时间：2019/05/06 deep-levels transient spectroscopy  deep-level defects  alpha-radiation  defects concentration   Low-frequency noise properties of gan schottky barriers deposited on intermediate temperature buffer layers 期刊论文 Materials science in semiconductor processing, 2003, 卷号: 6, 期号: 5-6, 页码: 523-525 作者:  Leung, BH;  Fong, WK;  Surya, C;  Lu, LW;  Ge, WK 收藏  |  浏览/下载：22/0  |  提交时间：2019/05/12 Gan  Low-frequency noise  Deep levels  Deep level transient fourier spectroscopy   Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers 会议论文 1st international symposium on point defect and stoichiometry, sendai, japan, mar 20-22, 2003 Leung BH; Fong WK; Surya C; Lu LW; Ge WK 收藏  |  浏览/下载：23/0  |  提交时间：2010/10/29 GaN  low-frequency noise  deep levels  deep level transient Fourier spectroscopy  DEVICES   Application of positron annihilation lifetime technique to the study of deep level transients in semiconductors 期刊论文 Journal of Applied Physics, 2002, 卷号: Vol.91 No.6, 页码: 3931-3933 作者:  Deng, AH;  Shan, YY;  Fung, S;  Beling, CD 收藏  |  浏览/下载：2/0  |  提交时间：2019/02/25 Deep level transient spectroscopy  Positrons  Crystalline semiconductors  Defect levels  Semiconductors