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	Interaction of alpha radiation with iron-doped n-type silicon
	Khizar-ul-Haq[1]; Khan, M. A.[2]; Qurashi, U. S.[3]; Majid, Abdul[4]
刊名	MICROELECTRONICS JOURNAL
	2008
卷号	39页码:797-801
关键词	deep-levels transient spectroscopy deep-level defects alpha-radiation defects concentration
ISSN号	0026-2692
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2348934
专题	上海大学
作者单位	1.[1]Shanghai Univ, Dept Mat Sci, Shanghai 201800, Peoples R China. 2.[2]Shanghai Univ, Dept Mat Sci, Shanghai 201800, Peoples R China. 3.[3]Quaid I Azam Univ, Dept Phys, Semicond Phys Lab, Islamabad, Pakistan. 4.[4]Quaid I Azam Univ, Dept Phys, Semicond Phys Lab, Islamabad, Pakistan.
推荐引用方式 GB/T 7714	Khizar-ul-Haq[1],Khan, M. A.[2],Qurashi, U. S.[3],et al. Interaction of alpha radiation with iron-doped n-type silicon[J]. MICROELECTRONICS JOURNAL,2008,39:797-801.
APA	Khizar-ul-Haq[1],Khan, M. A.[2],Qurashi, U. S.[3],&Majid, Abdul[4].(2008).Interaction of alpha radiation with iron-doped n-type silicon.MICROELECTRONICS JOURNAL,39,797-801.
MLA	Khizar-ul-Haq[1],et al."Interaction of alpha radiation with iron-doped n-type silicon".MICROELECTRONICS JOURNAL 39(2008):797-801.

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