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CORC

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The roles of the temperature on the structural and electronic properties of deep-level VAsVGa defects in gallium arsenide 期刊论文
2015, 卷号: 637, 页码: 16-19
作者:  Ma, Deming;  Chen, Xi;  Qiao, Hongbo;  Shi, Wei;  Li, Enling
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/20
First-principles study on the effects of the intrinsic defects in GaAs saturable absorber 会议论文
International Symposium on Optoelectronic Technology and Application (IPTA) - Infrared Technology and Applications, MAY 13-15, 2014
作者:  Ma, Xiaoyang;  Li, Dechun;  Zhao, Shengzhi;  Cong, Wen;  Li, Guiqiu
收藏  |  浏览/下载：9/0  |  提交时间：2019/12/31
1.6 MeV electron irradiation on the characteristics of CdTe thin film solar cells 期刊论文
Advanced Materials Research, 2012, 卷号: Vol.343-344, 页码: 181-187
作者:  Fang, Mingyue;  Zhang, Jingquan;  Feng, Lianghuan;  Wu, Lili;  Li, Wei
收藏  |  浏览/下载：1/0  |  提交时间：2019/02/25
Interaction of alpha radiation with iron-doped n-type silicon 期刊论文
MICROELECTRONICS JOURNAL, 2008, 卷号: 39, 页码: 797-801
作者:  Khizar-ul-Haq[1];  Khan, M. A.[2];  Qurashi, U. S.[3];  Majid, Abdul[4]
收藏  |  浏览/下载：3/0  |  提交时间：2019/05/06
Deep level transient spectroscopy studies of Er and Pr implanted GaN films 期刊论文
acta physica sinica, 2006, 卷号: 55, 期号: 3, 页码: 1407-1412
Song SF; Chen WD; Xu ZJ; Xu XR
收藏  |  浏览/下载：46/0  |  提交时间：2010/04/11
Growth of high quality semi-insulating InP single crystal by suppression of compensation defects 期刊论文
journal of rare earths, 2006, 卷号: 24, 期号: sp.iss.si, 页码: 75-77
Zhao YW; Dong ZY; Duan ML; Sun WR; Yang ZX
收藏  |  浏览/下载：38/0  |  提交时间：2010/04/11
Electron irradiation-induced defects in InP pre-annealed at high temperature 期刊论文
materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 380-383
Zhao YW (Zhao Y. W.); Dong ZY (Dong Z. Y.); Deng AH (Deng A. H.)
收藏  |  浏览/下载：44/0  |  提交时间：2010/04/11
Improvement of the electrical property of semi-insulating InP by suppression of compensation defects 会议论文
17th international conference on indium phosphide and related materials, glasgow, scotland, may 08-12, 2005
Zhao, YW; Dong, ZY
收藏  |  浏览/下载：221/68  |  提交时间：2010/03/29
Study of unintentionally doped GaN grown on SiC by Laplace defect spectroscopy 期刊论文
2004
Zhan, HH; Kang, JY; Wang, Z; Chen, YH; Ye, XL; 康俊勇
收藏  |  浏览/下载：1/0  |  提交时间：2013/12/12
Shallow donor defect formation and its influence on semi-insulating indium phosphide after high temperature annealing with long duration 会议论文
13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004
Zhao, YW; Dong, ZY; Zhang, YH; Li, CJ
收藏  |  浏览/下载：177/52  |  提交时间：2010/03/29

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