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浏览/检索结果: 共6条，第1-6条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序作者升序作者降序提交时间升序提交时间降序题名升序题名降序 A full-range analytical current model for heterojunction TFET with dual material gate 期刊论文 IEEE Transactions on Electron Devices, 2018, 卷号: 65, 页码: 5213-5217 作者:  Guan, Yunhe;  Li, Zunchao;  Zhang, Wenhao;  Zhang, Yefei;  Liang, Feng 收藏  |  浏览/下载：13/0  |  提交时间：2019/11/19 Ambipolar behavior  Ambipolar currents  Current modeling  Drain current models  Dual material gate  Gaussian quadratures  Mobile charge  Tunnel field-effect transistors (TFET)   Comparison of the performance improvement for the two novel SOI-tunnel FETs with the lateral dual-gate and triple-gate 期刊论文 Microsystem Technologies, 2018 作者:  Wei, Sufen;  Zhang, Guohe;  Geng, Li;  Shao, Zhibiao;  Yang, Cheng-Fu 收藏  |  浏览/下载：10/0  |  提交时间：2019/11/26 Band to band tunneling  Compare and analyze  Modulating effect  Off-state current  On state current  Performance improvements  Tunnel field-effect transistors (TFET)  Tunneling barrier   Compact Model for Double-Gate Tunnel FETs with Gate-Drain Underlap 期刊论文 IEEE Transactions on Electron Devices, 2017, 卷号: 64, 期号: 12, 页码: 5242-5248 作者:  Xu, Peng;  Lou, Haijun;  Zhang, Lining;  Yu, Zhonghua;  Lin, Xinnan 收藏  |  浏览/下载：1/0  |  提交时间：2020/11/14 Capacitance  SPICE  Tunnel field effect transistors  Ambipolar currents  Compact model  Double gate tunnel fets  Doublegate tunnel fets (DG-TFET)  Effective resistances  Electrical characteristic  Gate drain  Tunneling field-effect transistors   New Understanding of Random Telegraph Noise Amplitude in Tunnel FETs 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017 Chen, Cheng; Huang, Qianqian; Zhu, Jiadi; Zhao, Yang; Guo, Lingyi; Huang, Ru 收藏  |  浏览/下载：10/0  |  提交时间：2017/12/03 Amplitude  annealing process  band-to-band tunneling (BTBT) generation rate  nonuniformity  random dopant fluctuation (RDF)  random telegraph noise (RTN)  source doping concentration  tunnel FET (TFET)  FIELD-EFFECT TRANSISTORS  RANDOM DOPANT FLUCTUATION  LINE-EDGE ROUGHNESS  1/F NOISE  ELECTRICAL NOISE  CMOS DEVICES  VARIABILITY  IMPACT  TFET   A Novel Tunnel FET Design With Stacked Source Configuration for Average Subthreshold Swing Reduction 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016 Wu, Chunlei; Huang, Qianqian; Zhao, Yang; Wang, Jiaxin; Wang, Yangyuan; Huang, Ru 收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03 Band-to-band tunneling (BTBT)  heterostructure  subthreshold slope  tunnel FET (TFET)  FIELD-EFFECT TRANSISTORS  LOGIC   A Novel Barrier Controlled Tunnel FET 期刊论文 ieee electron device letters, 2014 Wang, Hao; Chang, Sheng; Hu, Yue; He, Hongyu; He, Jin; Huang, Qijun; He, Frank; Wang, Gaofeng 收藏  |  浏览/下载：5/0  |  提交时间：2015/11/10 Tunnel field effect transistor (TFET)  carbon nanotube (CNT)  barrier controlled device  work function  numerical simulation  FIELD-EFFECT TRANSISTORS  PERFORMANCE