| Comparison of the performance improvement for the two novel SOI-tunnel FETs with the lateral dual-gate and triple-gate | |
| Wei, Sufen; Zhang, Guohe; Geng, Li; Shao, Zhibiao; Yang, Cheng-Fu | |
| 刊名 | Microsystem Technologies
 |
| 2018 | |
| 关键词 | Band to band tunneling Compare and analyze Modulating effect Off-state current On state current Performance improvements Tunnel field-effect transistors (TFET) Tunneling barrier |
| ISSN号 | 0946-7076 |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2920111 |
| 专题 | 西安交通大学 |
| 推荐引用方式 GB/T 7714 | Wei, Sufen,Zhang, Guohe,Geng, Li,et al. Comparison of the performance improvement for the two novel SOI-tunnel FETs with the lateral dual-gate and triple-gate[J]. Microsystem Technologies,2018. |
| APA | Wei, Sufen,Zhang, Guohe,Geng, Li,Shao, Zhibiao,&Yang, Cheng-Fu.(2018).Comparison of the performance improvement for the two novel SOI-tunnel FETs with the lateral dual-gate and triple-gate.Microsystem Technologies. |
| MLA | Wei, Sufen,et al."Comparison of the performance improvement for the two novel SOI-tunnel FETs with the lateral dual-gate and triple-gate".Microsystem Technologies (2018). |
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