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长春光学精密机械与物... [2]
大连理工大学 [1]
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会议论文 [2]
期刊论文 [1]
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2013 [1]
2012 [1]
2010 [1]
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Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique (EI CONFERENCE)
会议论文
2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China
Zhang T.
;
Miao G.
;
Fu J.
;
Ban D.
;
Shen Z.
;
Lin H.
;
Zou X.
;
Peng H.
收藏
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浏览/下载:22/0
  |  
提交时间:2013/03/25
InP/In0.82Ga0.18As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn
TMGa
AsH3
and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power
their temperatures were detected by a thermocouple
and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In0.82Ga0.18As buffer with the thickness of 100 nm
In0.82Ga0.18As absorption layer with the thickness of 2.8 m
and the InP cap with the thickness of 0.8 m. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of In0.82Ga0.18As detector were studied
the curves of the I-V characteristics
the range of response spectrum
and the detectivity (D*) were obtained. (2013) Trans Tech Publications
Switzerland.
InGaAs nanoflowers grown by MOCVD (EI CONFERENCE)
会议论文
2012 Spring International Conference on Material Sciences and Technology, MST-S, May 27, 2012 - May 30, 2012, Xi'an, China
Zhang T.
;
Miao G.
;
Fu J.
;
Ban D.
;
Shen Z.
;
Lin H.
;
Zou X.
;
Peng H.
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  |  
浏览/下载:17/0
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提交时间:2013/03/25
InGaAs nanoflowers have been prepared on InP substrates by MOCVD
using TMIn
TMGa and AsH3 as reactive precursors at 420 C. Through observation by scanning electron microscopy
we find that InGaAs nanoflowers are composed with blades and rods. The flower patterns are controlled by the growth temperature. The nanoflowers of InGaAs are disappeared
when we alter the growth temperature up and down. The InGaAs nanoflowers are In0.98Ga0.02As. (2012) Trans Tech Publications
Switzerland.
TMGa流量对玻璃衬底上低温沉积GaN的影响
期刊论文
真空科学与技术学报, 2010, 卷号: 30, 页码: 445-449
作者:
陈伟绩
;
秦福文
;
吴爱民
;
刘胜芳
;
杨智慧
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浏览/下载:1/0
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提交时间:2019/12/24
GaN TMGa流量 化学气相沉积 玻璃衬底 低温
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