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浏览/检索结果:
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Highly tensile-strained sub-monolayer Ge nanostructure on GaSb studied by scanning tunneling microscopy
期刊论文
MATERIALS RESEARCH EXPRESS, 2017, 卷号: 4, 页码: 045907(1-5)
作者:
Li Yang[1]
;
Song Yuxin[2]
;
Zhang Zhenpu[3]
;
Li Yaoyao[4]
;
Chen Qimiao[5]
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/04/24
scanning tunneling microscopy
tensile-strained Ge
nanostructure
Frequency dependent optical conductivity of strained graphene at T=0 from an effective quantum field theory
期刊论文
PHYSICA B-CONDENSED MATTER, 2017, 卷号: 511, 页码: 80-82
作者:
Zhang, Shi-Jiang
;
Pan, Hui
;
Wang, Hai-Long
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  |  
浏览/下载:4/0
  |  
提交时间:2019/12/30
Optical conductivity
Strained graphene
Relativistic Dirac Hamiltonian
High molecular weight cyclic polysiloxanes from organocatalytic zwitterionic polymerization of constrained spirocyclosiloxanes
期刊论文
POLYMER CHEMISTRY, 2017, 卷号: 8, 页码: 7301-7306
作者:
Wu, Chunyan
;
Yu, Jianyi
;
Li, Qiaosheng
;
Liu, Yuzhou
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  |  
浏览/下载:9/0
  |  
提交时间:2019/12/30
Catalyst activity
Design for testability
Molecular weight
Polymerization
Silanes
Silicon compounds
Strain energy
Synthesis (chemical)
Cyclosiloxanes
DFT calculation
High molecular weight
Highly strained
Organocatalytic
Polymerization of cyclic siloxanes
Structural feature
Topological structure
Silicones
Rhodium(III)-Catalyzed Coupling of Arenes with Cyclopropanols via C-H Activation and Ring Opening
期刊论文
ACS CATALYSIS, 2016, 卷号: 6, 期号: 2, 页码: 647-651
作者:
Zhou, Xukai
;
Yu, Songjie
;
Kong, Lingheng
;
Li, Xingwei
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  |  
浏览/下载:15/0
  |  
提交时间:2019/06/20
Rhodium(Iii) Catalysis
C-h Activation
Strained Ring
Ring Opening
Cyclopropanols
Compact Analytical Threshold Voltage Model of Strained Gate-All-Around MOSFET Fabricated on Si1-xGex Virtual Substrate
期刊论文
IEICE TRANSACTIONS ON ELECTRONICS, 2016, 卷号: E99C, 期号: [db:dc_citation_issue], 页码: 302-307
作者:
Zhang, Yefei
;
Li, Zunchao
;
Wang, Chuang
;
Liang, Feng
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  |  
浏览/下载:3/0
  |  
提交时间:2019/12/02
threshold voltage
strained silicon
compact modeling
S i(1-x)Ge(x) virtual substrate
gate-all-around MOSFET
Measurement of residual stress in a multi-layer semiconductor heterostructure by micro-Raman spectroscopy
期刊论文
Acta Mechanica Sinica, 2016, 卷号: 第32卷, 页码: P805-812
作者:
Qiu Wei1
;
Cheng Cuili1
;
Liang Renrong2
;
Zhao Chunwang3
;
Lei Zhenkun4
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  |  
浏览/下载:3/0
  |  
提交时间:2019/11/26
Residual stress/Multi-layer semiconductor heterostructure/Micro-Raman spectroscopy (MRS)/Strained silicon/Germanium silicon
Design considerations of biaxially tensile-strained germanium-on-silicon lasers (EI收录SCI收录)
期刊论文
Semiconductor Science and Technology, 2016, 卷号: 31, 页码: 065015-065015
作者:
Li, Xiyue[1,2]
;
Li, Zhiqiang[3]
;
Li, Simon[3]
;
Chrostowski, Lukas[4]
;
Xia, Guangrui[2]
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/04/24
Band structure
Carrier lifetime
Defects
Design
Fabry
Perot interferometers
Germanium
Lasers
Photonics
Polycrystalline materials
Polysilicon
Strained silicon
Structural optimization
Measurement of residual stress in a multi-layer semiconductor heterostructure by micro-Raman spectroscopy
期刊论文
ACTA MECHANICA SINICA, 2016, 卷号: 32, 页码: 805-812
作者:
Qiu, Wei
;
Cheng, Cui-Li
;
Liang, Ren-Rong
;
Zhao, Chun-Wang
;
Lei, Zhen-Kun
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/09
Residual stress
Multi-layer semiconductor heterostructure
Micro-Raman spectroscopy (MRS)
Strained silicon
Germanium silicon
Two-dimensional analytical models for double-gate (DG) strained-Si metal-oxide-semiconductor field transistor with vertical gaussian doping profile
期刊论文
Journal of Central South University of Science and Technology, 2016, 卷号: Vol.47 No.4, 页码: 1203-1208
作者:
Li, Jin
;
Wu, Xiaofeng
;
Xi, Zaifang
;
Hu, Shigang
;
Li, Mu
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/12/31
Gaussian doping
strained Si
threshold voltage
Ultrathin homogeneous ni(al) germanosilicide layer formation on strained sige with al/ni multi-layers
期刊论文
Microelectronic engineering, 2015, 卷号: 137, 页码: 88-91
作者:
Liu, Linjie
;
Jin, Lei
;
Knoll, Lars
;
Wirths, Stephan
;
Buca, Dan
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  |  
浏览/下载:43/0
  |  
提交时间:2019/05/10
Germanosilicide
Al mediation
Strained sige
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