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科研机构
北京航空航天大学 [43]
计算技术研究所 [3]
北京大学 [2]
内容类型
期刊论文 [27]
会议论文 [20]
其他 [1]
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2020 [2]
2019 [6]
2018 [9]
2017 [5]
2016 [9]
2015 [5]
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Write Back Energy Optimization for STT-MRAM-based Last-level Cache with Data Pattern Characterization
期刊论文
ACM JOURNAL ON EMERGING TECHNOLOGIES IN COMPUTING SYSTEMS, 2020, 卷号: 16, 期号: 3, 页码: 18
作者:
Ni, Jiacheng
;
Liu, Keren
;
Wu, Bi
;
Zhao, Weisheng
;
Cheng, Yuanqing
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2020/12/10
STT-MRAM
write energy reductions
data patterns
cache hierarchy
A Novel High Performance and Energy Efficient NUCA Architecture for STT-MRAM LLCs With Thermal Consideration
期刊论文
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2020, 卷号: 39, 期号: 4, 页码: 803-815
作者:
Wu, Bi
;
Dai, Pengcheng
;
Cheng, Yuanqing
;
Wang, Ying
;
Yang, Jianlei
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2020/12/10
System-on-chip
Computer architecture
Magnetic tunneling
Transistors
Switches
Thermal sensors
Organizations
Cache
data migration
low power
spin transfer torque magnetic memory (STT-MRAM)
thermal gradient
An Adaptive Thermal-Aware ECC Scheme for Reliable STT-MRAM LLC Design
期刊论文
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2019, 卷号: 27, 期号: 8, 页码: 1851-1860
作者:
Wu, Bi
;
Zhang, Beibei
;
Cheng, Yuanqing
;
Wang, Ying
;
Liu, Dijun
收藏
  |  
浏览/下载:73/0
  |  
提交时间:2019/12/10
Error correction code (ECC)
last level cache (LLC)
reliability
spin-transfer-torque magnetoresistive random-access memory (STT-MRAM)
temperature
Stability and Variability Emphasized STT-MRAM Sensing Circuit with Performance Enhancement
会议论文
2018 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2018, 2018-10-26
作者:
Han, M.
;
Cai, H.
;
Yang, J.
;
Naviner, L.
;
Wang, Y.
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2019/12/30
Convergence of numerical methods
Magnetic anisotropy
Magnetic recording
Magnetic storage
Magnetism
Random access storage
Timing circuits
Tunnel junctions
low Vdd performance
Magnetic random access memory
Magnetic tunnel junction
Performance enhancements
Perpendicular magnetic anisotropy
Process Variation
Sensing margin
STT-MRAM
MRAM devices
Spintronic Processing Unit in Spin Transfer Torque Magnetic Random Access Memory
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 卷号: 66, 页码: 2017-2022
作者:
Zhang, He
;
Kang, Wang
;
Cao, Kaihua
;
Wu, Bi
;
Zhang, Youguang
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2019/12/30
Process-in-memory (PIM)
spin transfer toque magnetic random access memory (STT-MRAM)
spintronic processing unit (SPU)
von Neumann bottleneck
An STT-MRAM Based in Memory Architecture for Low Power Integral Computing
期刊论文
IEEE TRANSACTIONS ON COMPUTERS, 2019, 卷号: 68, 页码: 617-623
作者:
Zhao, Yinglin
;
Ouyang, Peng
;
Kang, Wang
;
Yin, Shouyi
;
Zhang, Youguang
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2019/12/30
Integral histogram
parallel architecture
STT-MRAM
processing in memory
full adder
Addressing Failure and Aging Degradation in MRAM/MeRAM-on-FDSOI Integration
期刊论文
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2019, 卷号: 66, 页码: 239-250
作者:
Cai, Hao
;
Wang, You
;
Naviner, Lirida Alves de Barros
;
Liu, Xinning
;
Shan, Weiwei
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2019/12/30
Fully depleted silicon-on-insulator (FDSOI)
magnetic tunnel junction (MTJ)
spin transfer torque magnetic random access memory (STT-MRAM)
voltage-controlled magnetic anisotropy (VCMA)
magnetoelectric random access memory (MeRAM)
aging
reliability
variability
An Adaptive Thermal-Aware ECC Scheme for Reliable STT-MRAM LLC Design
期刊论文
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2019, 卷号: 27, 页码: 1851-1860
作者:
Wu, Bi
;
Zhang, Beibei
;
Cheng, Yuanqing
;
Wang, Ying
;
Liu, Dijun
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2019/12/30
Error correction code (ECC)
last level cache (LLC)
reliability
spin-transfer-torque magnetoresistive random-access memory (STT-MRAM)
temperature
Addressing the Thermal Issues of STT-MRAM From Compact Modeling to Design Techniques
期刊论文
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2018, 卷号: 17, 页码: 345-352
作者:
Zhang, Liuyang
;
Cheng, Yuanqing
;
Kang, Wang
;
Torres, Lionel
;
Zhang, Youguang
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2019/12/30
Magnetic tunnel junction (MTJ)
read reliability
sensing circuit
STT-MRAM
thermal fluctuations
An Adaptive 3T-3MTJ Memory Cell Design for STT-MRAM-Based LLCs
期刊论文
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2018, 卷号: 26, 页码: 484-495
作者:
Xue, Linuo
;
Wu, Bi
;
Zhang, Beibei
;
Cheng, Yuanqing
;
Wang, Peiyuan
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2019/12/30
Adaptive cache design
LLC
sensing circuit design
STT-MRAM
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