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科研机构
山东大学 [8]
内容类型
期刊论文 [8]
发表日期
2012 [6]
2011 [1]
2010 [1]
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The Mean Projected Range and Range Straggling of Er Ions Implanted in 6h Silicon Carbide
期刊论文
ADVANCED MATERIALS RESEARCH II, PTS 1 AND 2, 2012, 卷号: 463-464, 页码: 798-801
作者:
Qin, Xi-Feng
;
Wang, Hui-Ning
;
Ji, Zi-Wu
;
Wang, Feng-Xiang
;
Fu, Gang
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/23
Er ion implantation
6H-SiC
projected range
range straggling
Rutherford backscattering technique
The mean projected range and range straggling of Yb ions implanted in silicon crystal
期刊论文
NEW MATERIALS AND PROCESSES, PTS 1-3, 2012, 卷号: 476-478, 页码: 1249-1253
作者:
Qin, Xi-Feng
;
Wang, Hui-Ning
;
Ji, Zi-Wu
;
Wang, Feng-Xiang
;
Fu, Gang
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/12/23
Yb ion implantation
projected range
range straggling
Rutherford
backscattering technique
Investigation of the inhibiting outdiffusion of erbium atoms to a silicon-on-insulator surface after annealing at high temperature
期刊论文
CHINESE PHYSICS B, 2012, 卷号: 21, 期号: 6
作者:
Qin Xi-Feng
;
Li Hong-Zhen
;
Li Shuang
;
Ji Zi-Wu
;
Wang Hui-Ning
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/12/23
Er ion implantation
silicon-on-insulator
annealing behavior
Rutherford backscattering technique
Formation of a highly Erbium doped silicon-on-insulator layer by introducing SiOx on or into a silicon surface
期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2012, 卷号: 278, 页码: 1-3
作者:
Qin, Xi-Feng
;
Ji, Zi-Wu
;
Chen, Ming
;
Liu, Xiu-Hong
;
Wang, Xue-Lin
收藏
  |  
浏览/下载:1/0
  |  
提交时间:2019/12/23
Silicon-on-insulator
Erbium ion implantation
Heterostructure
Annealing behavior
Rutherford backscattering technique
Investigation of the inhibiting outdiffusion of erbium atoms to a silicon-on-insulator surface after annealing at high temperature
期刊论文
Chinese Physics B, 2012, 期号: 06, 页码: 389-392
作者:
Qin XF(秦希峰)
;
Li HZ(李洪珍)
;
Li S(李双)
;
Ji ZW(冀子武)
;
Wang HN(王绘凝)
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/12/23
Er ion implantation,silicon-on-insulator,annealing behavior,Rutherford backscattering technique
Formation of a highly Erbium doped silicon-on-insulator layer by introducing SiO _x on or into a silicon surface
期刊论文
Nuclear Instruments and Methods in Physics Research, Section B. Beam Interactions with Materials and Atoms, 2012, 页码: 1-3
作者:
Qin, X.-F.
;
Ji, Z.-W.
;
Chen, M.
;
Liu, X.-H.
;
Wang, X.-L.
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/12/23
Annealing behavior
Erbium ion implantation
Heterostructure
Rutherford backscattering technique
Silicon-on-insulator
Structural and optical properties of waveguides in YbVO4 crystals formed by 3.0 MeV Cu2+-ions implantation
期刊论文
OPTICS AND LASER TECHNOLOGY, 2011, 卷号: 43, 期号: 7, 页码: 1138-1142
作者:
Jia, Chuan-Lei
;
Zhang, Tong
;
Wang, Lei
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/12/23
Laser materials
Nonlinear waveguides
Rutherford
backscattering/Channeling technique
Investigation of the lateral spread of erbium ions implanted in silicon crystal
期刊论文
Chinese Physics B, 2010, 卷号: 19, 期号: 11, 页码: 340-343
作者:
Qin XF(秦希峰)
;
Chen M(陈明)
;
Wang XL(王雪林)
;
Liang Y(梁毅)
;
Zhang SM(张少梅)
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/12/26
erbium ion implantation
silicon
Rutherford backscattering technique
lateral spread
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