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浏览/检索结果: 共8条，第1-8条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序作者升序作者降序提交时间升序提交时间降序题名升序题名降序 The Mean Projected Range and Range Straggling of Er Ions Implanted in 6h Silicon Carbide 期刊论文 ADVANCED MATERIALS RESEARCH II, PTS 1 AND 2, 2012, 卷号: 463-464, 页码: 798-801 作者:  Qin, Xi-Feng;  Wang, Hui-Ning;  Ji, Zi-Wu;  Wang, Feng-Xiang;  Fu, Gang 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/23 Er ion implantation  6H-SiC  projected range  range straggling  Rutherford backscattering technique   The mean projected range and range straggling of Yb ions implanted in silicon crystal 期刊论文 NEW MATERIALS AND PROCESSES, PTS 1-3, 2012, 卷号: 476-478, 页码: 1249-1253 作者:  Qin, Xi-Feng;  Wang, Hui-Ning;  Ji, Zi-Wu;  Wang, Feng-Xiang;  Fu, Gang 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/23 Yb ion implantation  projected range  range straggling  Rutherford  backscattering technique   Investigation of the inhibiting outdiffusion of erbium atoms to a silicon-on-insulator surface after annealing at high temperature 期刊论文 CHINESE PHYSICS B, 2012, 卷号: 21, 期号: 6 作者:  Qin Xi-Feng;  Li Hong-Zhen;  Li Shuang;  Ji Zi-Wu;  Wang Hui-Ning 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/23 Er ion implantation  silicon-on-insulator  annealing behavior  Rutherford backscattering technique   Formation of a highly Erbium doped silicon-on-insulator layer by introducing SiOx on or into a silicon surface 期刊论文 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2012, 卷号: 278, 页码: 1-3 作者:  Qin, Xi-Feng;  Ji, Zi-Wu;  Chen, Ming;  Liu, Xiu-Hong;  Wang, Xue-Lin 收藏  |  浏览/下载：1/0  |  提交时间：2019/12/23 Silicon-on-insulator  Erbium ion implantation  Heterostructure  Annealing behavior  Rutherford backscattering technique   Investigation of the inhibiting outdiffusion of erbium atoms to a silicon-on-insulator surface after annealing at high temperature 期刊论文 Chinese Physics B, 2012, 期号: 06, 页码: 389-392 作者:  Qin XF(秦希峰);  Li HZ(李洪珍);  Li S(李双);  Ji ZW(冀子武);  Wang HN(王绘凝) 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/23 Er ion implantation,silicon-on-insulator,annealing behavior,Rutherford backscattering technique   Formation of a highly Erbium doped silicon-on-insulator layer by introducing SiO _x on or into a silicon surface 期刊论文 Nuclear Instruments and Methods in Physics Research, Section B. Beam Interactions with Materials and Atoms, 2012, 页码: 1-3 作者:  Qin, X.-F.;  Ji, Z.-W.;  Chen, M.;  Liu, X.-H.;  Wang, X.-L. 收藏  |  浏览/下载：5/0  |  提交时间：2019/12/23 Annealing behavior  Erbium ion implantation  Heterostructure  Rutherford backscattering technique  Silicon-on-insulator   Structural and optical properties of waveguides in YbVO4 crystals formed by 3.0 MeV Cu2+-ions implantation 期刊论文 OPTICS AND LASER TECHNOLOGY, 2011, 卷号: 43, 期号: 7, 页码: 1138-1142 作者:  Jia, Chuan-Lei;  Zhang, Tong;  Wang, Lei 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/23 Laser materials  Nonlinear waveguides  Rutherford  backscattering/Channeling technique   Investigation of the lateral spread of erbium ions implanted in silicon crystal 期刊论文 Chinese Physics B, 2010, 卷号: 19, 期号: 11, 页码: 340-343 作者:  Qin XF(秦希峰);  Chen M(陈明);  Wang XL(王雪林);  Liang Y(梁毅);  Zhang SM(张少梅) 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/26 erbium ion implantation  silicon  Rutherford backscattering technique  lateral spread