QQ客服 官方微博 反馈留言

	Formation of a highly Erbium doped silicon-on-insulator layer by introducing SiOx on or into a silicon surface
	Qin, Xi-Feng; Ji, Zi-Wu; Chen, Ming; Liu, Xiu-Hong; Wang, Xue-Lin; Wang, Ke-Ming; Zhao, Qing-Tai; Fu, Gang
刊名	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
	2012
卷号	278页码:1-3
关键词	Silicon-on-insulator Erbium ion implantation Heterostructure Annealing behavior Rutherford backscattering technique
DOI	10.1016/j.nimb.2012.02.003
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5201659
专题	山东大学
作者单位	1.Shandong Univ, Sch Phys, Jinan 250100, Peoples R China. 2.[Qin, Xi-Feng 3.Ji, Z
推荐引用方式 GB/T 7714	Qin, Xi-Feng,Ji, Zi-Wu,Chen, Ming,et al. Formation of a highly Erbium doped silicon-on-insulator layer by introducing SiOx on or into a silicon surface[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2012,278:1-3.
APA	Qin, Xi-Feng.,Ji, Zi-Wu.,Chen, Ming.,Liu, Xiu-Hong.,Wang, Xue-Lin.,...&Fu, Gang.(2012).Formation of a highly Erbium doped silicon-on-insulator layer by introducing SiOx on or into a silicon surface.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,278,1-3.
MLA	Qin, Xi-Feng,et al."Formation of a highly Erbium doped silicon-on-insulator layer by introducing SiOx on or into a silicon surface".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 278(2012):1-3.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。