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浏览/检索结果: 共6条，第1-6条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Robust PECVD SiC membrane made for stencil lithography 期刊论文 微电子工程, 2011 Xie, Shenqi; Savu, Veronica; Tang, Wei; Vazquez-Mena, Oscar; Sidler, Katrin; Zhang, Haixia; Brugger, Juergen 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/12 Stencil lithography  SiC stencil  Stress-induced deformation  Reactive ion etching (RIE)  MASK   Reactive ion etching and ion beam etching for ferroelectric memories 期刊论文 2010, 2010 Tian-Qi Shao; Tian-Ling Ren; Li-Tian Liu; Jun Zhu; Zhi-Jian Li 收藏  |  浏览/下载：4/0 RIE effect on the ferroelectric properties 会议论文 INTEGRATED FERROELECTRICS, 17th International Symposium on Integrated Ferroelectrics, Shanghai, PEOPLES R CHINA, Web of Science Zhang, ZG; Xie, D; Wei, CG; Shao, TQ; Ren, TL; Liu, JS; Liu, ZH; Zhu, J 收藏  |  浏览/下载：3/0 Fabrication of metal suspending nanostructures by nanoimprint lithography (NIL) and isotropic reactive ion etching (RIE) 期刊论文 中国科学e辑 技术科学, 2009 Xie GuoYong; Zhang Jin; Zhang YongYi; Zhang YingYing; Zhu Tao; Liu ZhongFan 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/10 suspending nanostructure  fabrication  nanoimprint lithography (NIL)  isotropic reactive ion etching (RIE)  MASS DETECTION  DRY RELEASE  LASER  ALUMINUM  IMPRINT   二氧化硅纳米颗粒的反应离子刻蚀及其在硅纳米针尖制备中的应用 期刊论文 纳米技术与精密工程, 2009 赵瑜; 江洵; 李成垚; 王玮; 高旻; 李志宏 收藏  |  浏览/下载：1/0  |  提交时间：2015/11/12 纳米颗粒单层膜 纳米针尖阵列 反应离子刻蚀 场发射效应 nanoparticle monolayer nanopillar array reactive ion etching(RIE) field emission effect   Fabrication of 3232 polymer arrayed waveguide gratings using remelting technique (EI CONFERENCE) 会议论文 ICO20: Optical Communication, August 21, 2005 - August 26, 2005, Changshun, China Zhang D.; Wang F.; Zhang X.; Deng W.; Shulin E. 收藏  |  浏览/下载：15/0  |  提交时间：2013/03/25 A 32 32 arrayed waveguide grating (AWG) multiplexer operating around the 1550 nm wavelength has been designed and fabricated using fluorinated poly (ether ether ketone). The schematic layout is about 3.21.7 cm 2. For our AWG  the total loss of designed AWG multiplexer is calculated to be 4.5 dB. We fabricated the AWG multiplexer by spin coating  photolithographic patterning and reactive ion etching (RIE). The core size is 55 m2. The roughness of polymer surface was reduced by 20 nm using a remelting technique. The measured wavelength channel spacing of the fabricated AWG multiplexer is 0.796 nm and center wavelength is 1548 nm. The inserting loss of the AWG is 9.5 dB and crosstalk less than -20 dB.