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浏览/检索结果: 共5条，第1-5条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序作者升序作者降序提交时间升序提交时间降序题名升序题名降序 Interactive effects of elevated CO2 and drought on photosynthetic capacity and PSII performance in maize 期刊论文 PHOTOSYNTHETICA, 2014, 卷号: 52, 期号: 1, 页码: 63-70 作者:  Zong, Y. Z.;  Wang, W. F.;  Xue, Q. W.;  Shangguan, Z. P. 收藏  |  浏览/下载：19/0  |  提交时间：2015/12/11 drought stress  elevated CO2 concentration  OJIP induction curves  P-N-C-i curves   Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique (EI CONFERENCE) 会议论文 2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China Zhang T.; Miao G.; Fu J.; Ban D.; Shen Z.; Lin H.; Zou X.; Peng H. 收藏  |  浏览/下载：22/0  |  提交时间：2013/03/25 InP/In0.82Ga0.18As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn  TMGa  AsH3  and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power  their temperatures were detected by a thermocouple  and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In0.82Ga0.18As buffer with the thickness of 100 nm  In0.82Ga0.18As absorption layer with the thickness of 2.8 m  and the InP cap with the thickness of 0.8 m. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of In0.82Ga0.18As detector were studied  the curves of the I-V characteristics  the range of response spectrum  and the detectivity (D*) were obtained. (2013) Trans Tech Publications  Switzerland.   Synthesis and electrical characterization of tungsten oxide nanowires 期刊论文 2010, 2010 Huang Rui; Zhu Jing; Yu Rong 收藏  |  浏览/下载：7/0 Dynamic p-i and p-v curves for semiconductor lasers and modulators 期刊论文 Journal of lightwave technology, 2008, 卷号: 26, 期号: 17-20, 页码: 3369-3375 作者:  Zhu, Ning Hua;  Hasen, Qi Qi Ge;  Zhang, Hong Guang;  Wen, Ji Min;  Xie, Liang 收藏  |  浏览/下载：31/0  |  提交时间：2019/05/12 Electro-absorption modulator (eam)  Frequency response  Laser diode  P-i curves  P-v curves   Dynamic P-I and P-V Curves for Semiconductor Lasers and Modulators 期刊论文 journal of lightwave technology, 2008, 卷号: 26, 期号: 17-20, 页码: 3369-3375 Zhu NH; Hasen QQG; Zhang HG; Wen JM; Xie L 收藏  |  浏览/下载：208/51  |  提交时间：2010/03/08 Electro-absorption modulator (EAM)  frequency response  laser diode  P-I curves  P-V curves