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Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-mu m Quantum Dot Lasers 期刊论文
NANOSCALE RESEARCH LETTERS, 2018, 卷号: 13
作者:  Su, Xiang-Bin;  Ding, Ying;  Ma, Ben;  Zhang, Ke-Lu;  Chen, Ze-Sheng
收藏  |  浏览/下载：10/0  |  提交时间：2019/12/30
Effect of thickness on the structural, electrical and optical properties of ZnO films deposited by MBE (EI CONFERENCE) 会议论文
2011 International Conference on Advanced Design and Manufacturing Engineering, ADME 2011, September 16, 2011 - September 18, 2011, Guangzhou, China
Yang X.; Su S.; Yi X.; Mei T.
收藏  |  浏览/下载：22/0  |  提交时间：2013/03/25
A set of ZnO films of different thickness have been deposited on sapphire substrates using molecular beam epitaxy (MBE) by varying the growth time and the effect of film thickness on the structural  electrical and optical properties have been investigated. The X-ray diffraction (XRD) results indicate that the full width at half maximum (FWHM) of the (002) diffraction peak is decreased as the film thickness increasing  and the stress along c-axis is stable. Scanning electron microscope (SEM) measurement shows that the grains become more uniform as the film grows thicker and the film surface present distinct hexagon shape as the film is grown up to a thickness of 500nm. The optical absorbance  Hall mobility and photoluminescence (PL) intensity are increased in accordance with the thickness of the film. (2011) Trans Tech Publications  Switzerland.  
Homogeneous epitaxial growth of n,n '-di(n-butyl)quinacridone thin films on ag(110) 期刊论文
Journal of nanoscience and nanotechnology, 2010, 卷号: 10, 期号: 11, 页码: 7162-7166
作者:  Lin, Feng;  Fang, Zheyu;  Qu, Shengchun;  Huang, Shan;  Song, Wentao
收藏  |  浏览/下载：20/0  |  提交时间：2019/05/12
Tri-buffer process: A new approach to obtain high-quality ZnO epitaxial films on sapphire substrates 会议论文
JOURNAL OF ELECTRONIC MATERIALS, 48th Electronic Materials Conference (EMC), University Pk, PA, Web of Science
Mei, Z. X.; Du, X. L.; Wang, Y.; Ying, M. J.; Zeng, Z. Q.; Yuan, H. T.; Jia, J. F.; Xue, Q. K.; Zhang, Z.
收藏  |  浏览/下载：3/0
GaInP-AlInP-GaAs Blue Photovoltaic Detectors With Narrow Response Wavelength Width 期刊论文
IEEE PHOTONICS TECHNOLOGY LETTERS, 2010, 卷号: 22, 期号: 12, 页码: 944-946
Zhang, YG(张永刚）; Li, C; Gu, Y; Wang, K; Li, HSBY; Shao, XM; Fang, JX
收藏  |  浏览/下载：16/0  |  提交时间：2012/03/24
InP-based InGaAs/InAlGaAs digital alloy quantum well laser structure at 2 mu m 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 7, 页码: 77304-77304
Gu, Y; Wang, K; Li, YY; Li, C; Zhang, YG
收藏  |  浏览/下载：13/0  |  提交时间：2011/11/03
Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy 期刊论文
applied surface science, 2010, 卷号: 256, 期号: 22, 页码: 6881-6886
Zhao J (Zhao Jie); Zeng YP (Zeng Yiping); Liu C (Liu Chao); Cui LJ (Cui Lijie); Li YB (Li Yanbo)
收藏  |  浏览/下载：160/17  |  提交时间：2010/07/05
Short period inas/gasb superlattice infrared detector on gaas substrates 期刊论文
Journal of infrared and millimeter waves, 2009, 卷号: 28, 期号: 3, 页码: 165-+
作者:  Guo Jie;  Peng Zhen-Yu;  Lu Zheng-Xiong;  Sun Wei-Guo;  Hao Rui-Ting
收藏  |  浏览/下载：19/0  |  提交时间：2019/05/12
SHORT PERIOD InAs/GaSb SUPERLATTICE INFRARED DETECTOR ON GaAs SUBSTRATES 期刊论文
journal of infrared and millimeter waves, 2009, 卷号: 28, 期号: 3, 页码: 165-+
作者:  Xu YQ
收藏  |  浏览/下载：88/0  |  提交时间：2010/03/08
High-power quantum-dot superluminescent led with broadband drive current insensitive emission spectra using a tapered active region 期刊论文
Ieee photonics technology letters, 2008, 卷号: 20, 期号: 9-12, 页码: 782-784
作者:  Zhang, Z. Y.;  Hogg, R. A.;  Jin, P.;  Choi, T. L.;  Xu, B.
收藏  |  浏览/下载：21/0  |  提交时间：2019/05/12

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