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Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-mu m Quantum Dot Lasers
期刊论文
NANOSCALE RESEARCH LETTERS, 2018, 卷号: 13
作者:
Su, Xiang-Bin
;
Ding, Ying
;
Ma, Ben
;
Zhang, Ke-Lu
;
Chen, Ze-Sheng
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2019/12/30
Quantum dot (QD)
Annealing
Bimodal size
Molecular beam epitaxy (MBE)
Laser
Effect of thickness on the structural, electrical and optical properties of ZnO films deposited by MBE (EI CONFERENCE)
会议论文
2011 International Conference on Advanced Design and Manufacturing Engineering, ADME 2011, September 16, 2011 - September 18, 2011, Guangzhou, China
Yang X.
;
Su S.
;
Yi X.
;
Mei T.
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2013/03/25
A set of ZnO films of different thickness have been deposited on sapphire substrates using molecular beam epitaxy (MBE) by varying the growth time and the effect of film thickness on the structural
electrical and optical properties have been investigated. The X-ray diffraction (XRD) results indicate that the full width at half maximum (FWHM) of the (002) diffraction peak is decreased as the film thickness increasing
and the stress along c-axis is stable. Scanning electron microscope (SEM) measurement shows that the grains become more uniform as the film grows thicker and the film surface present distinct hexagon shape as the film is grown up to a thickness of 500nm. The optical absorbance
Hall mobility and photoluminescence (PL) intensity are increased in accordance with the thickness of the film. (2011) Trans Tech Publications
Switzerland.
Homogeneous epitaxial growth of n,n '-di(n-butyl)quinacridone thin films on ag(110)
期刊论文
Journal of nanoscience and nanotechnology, 2010, 卷号: 10, 期号: 11, 页码: 7162-7166
作者:
Lin, Feng
;
Fang, Zheyu
;
Qu, Shengchun
;
Huang, Shan
;
Song, Wentao
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2019/05/12
Qa4c
Molecular beam epitaxy (mbe)
Leed
Commensurate and incommensurate
Tri-buffer process: A new approach to obtain high-quality ZnO epitaxial films on sapphire substrates
会议论文
JOURNAL OF ELECTRONIC MATERIALS, 48th Electronic Materials Conference (EMC), University Pk, PA, Web of Science
Mei, Z. X.
;
Du, X. L.
;
Wang, Y.
;
Ying, M. J.
;
Zeng, Z. Q.
;
Yuan, H. T.
;
Jia, J. F.
;
Xue, Q. K.
;
Zhang, Z.
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  |  
浏览/下载:3/0
GaInP-AlInP-GaAs Blue Photovoltaic Detectors With Narrow Response Wavelength Width
期刊论文
IEEE PHOTONICS TECHNOLOGY LETTERS, 2010, 卷号: 22, 期号: 12, 页码: 944-946
Zhang, YG(张永刚)
;
Li, C
;
Gu, Y
;
Wang, K
;
Li, HSBY
;
Shao, XM
;
Fang, JX
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2012/03/24
GAS-SOURCE MBE
MOLECULAR-BEAM EPITAXY
InP-based InGaAs/InAlGaAs digital alloy quantum well laser structure at 2 mu m
期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 7, 页码: 77304-77304
Gu, Y
;
Wang, K
;
Li, YY
;
Li, C
;
Zhang, YG
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2011/11/03
MOLECULAR-BEAM EPITAXY
PERFORMANCE
GASB
MBE
Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy
期刊论文
applied surface science, 2010, 卷号: 256, 期号: 22, 页码: 6881-6886
Zhao J (Zhao Jie)
;
Zeng YP (Zeng Yiping)
;
Liu C (Liu Chao)
;
Cui LJ (Cui Lijie)
;
Li YB (Li Yanbo)
收藏
  |  
浏览/下载:160/17
  |  
提交时间:2010/07/05
ZnTe
Molecular beam epitaxy
Reflection high-energy electron diffraction
X-ray diffraction
Atomic force microscopy
VAPOR-PHASE EPITAXY
N-TYPE ZNTE
MBE GROWTH
100 GAAS
ZNSE
LAYERS
SURFACE
TEMPERATURE
SUBSTRATE
EPILAYERS
Short period inas/gasb superlattice infrared detector on gaas substrates
期刊论文
Journal of infrared and millimeter waves, 2009, 卷号: 28, 期号: 3, 页码: 165-+
作者:
Guo Jie
;
Peng Zhen-Yu
;
Lu Zheng-Xiong
;
Sun Wei-Guo
;
Hao Rui-Ting
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2019/05/12
Superlattice
Inas/gasb infrared detector
Molecular-beam epitaxy (mbe)
Spectral response
SHORT PERIOD InAs/GaSb SUPERLATTICE INFRARED DETECTOR ON GaAs SUBSTRATES
期刊论文
journal of infrared and millimeter waves, 2009, 卷号: 28, 期号: 3, 页码: 165-+
作者:
Xu YQ
收藏
  |  
浏览/下载:88/0
  |  
提交时间:2010/03/08
superlattice
InAs/GaSb infrared detector
molecular-beam epitaxy (MBE)
spectral response
High-power quantum-dot superluminescent led with broadband drive current insensitive emission spectra using a tapered active region
期刊论文
Ieee photonics technology letters, 2008, 卷号: 20, 期号: 9-12, 页码: 782-784
作者:
Zhang, Z. Y.
;
Hogg, R. A.
;
Jin, P.
;
Choi, T. L.
;
Xu, B.
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2019/05/12
Molecular beam epitaxy (mbe)
Quantum dots (qds)
Superlumineseent light-emitting diodes (sleds)
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