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Spectrally Resolved Shot-by-Shot Intensity Noise Characteristics of Soliton Spectrum Broadening in Normal Dispersion Single-Mode Fiber
会议论文
2018 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2018, 2018-07-29
作者:
Yao, Z.
;
Chen, J.
;
Li, T.
;
Zhang, Y.
;
Zhao, X.
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/30
Dispersion (waves)
Optical pumping
Intensity noise
Low noise
Noise magnitude
Normal dispersion
Pump wavelength
Spectral broadening
Spectral intensity
Spectrum broadening
Single mode fibers
Multifractal analysis of inclined oil-water countercurrent flow
期刊论文
石油科学(英文版), 2014, 卷号: 第1期, 页码: P111-121
作者:
Zhu Lei Jin Ningde * Gao Zhongke Zong Yanbo
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  |  
浏览/下载:9/0
  |  
提交时间:2019/11/26
Inclined oil-water two-phase flow/magnitude correlation/multifractal spectrum/nonlinear dynamics
Design of a new single star simulator for multi-colour temperature and wide-magnitude-range output
期刊论文
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2014, 卷号: Vol.16 No.1-2, 页码: 47-51
作者:
Dong, L
;
Zhang, T
;
Hou, L
;
Wu, YH
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  |  
浏览/下载:2/0
  |  
提交时间:2019/03/26
Star
simulator
Colour
temperature
Magnitude
Spectrum
Light
intensity
Effects of polishing parameters on the evolution of 3-D wafer patterns during CMP
会议论文
Shanghai, China, March 19, 2013 - March 21, 2013
作者:
Wu, Lixiao
;
Yan, Changfeng
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  |  
浏览/下载:1/0
  |  
提交时间:2020/11/15
Polishing
Pressure distribution
Semiconductor device manufacture
Silicon wafers
Chemical mechanical polishing(CMP)
Contact pressure distribution
Linear modeling
Magnitude spectrum
Polishing parameters
Polishing processs
Polishing time
Wafer patterns
An analytical model of contact pressure caused by 2-D wafer topography in chemical-mechanical polishing process
会议论文
Shanghai, China, March 18, 2012 - March 19, 2012
作者:
Wu, Lixiao
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浏览/下载:5/0
  |  
提交时间:2020/11/15
Chemical analysis
Geometry
Polishing
Semiconductor device manufacture
Silicon wafers
Topography
Chemical mechanical polishing(CMP)
Chemical-mechanical polishing process
Contact pressures
Elastic half space
Linear time-invariant system
Magnitude spectrum
Pattern features
Wafer topography
An analytical model of contact pressure distribution caused by 3-D wafer topography in chemical-mechanical polishing processes
期刊论文
Journal of the Electrochemical Society, 2012, 卷号: 159, 期号: 3, 页码: H266-H276
作者:
Wu, Lixiao
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浏览/下载:0/0
  |  
提交时间:2020/11/14
Chemical analysis
Chemical mechanical polishing
Linear systems
Polishing
Topography
Chemical-mechanical polishing process
Contact pressure distribution
Contact pressures
Different densities
Linear combinations
Linear elasticity theory
Magnitude spectrum
Polishing parameters
Modeling of the effect of wafer topography on chemical mechanical polishing processes based on 3D analysis
期刊论文
Journal of the Electrochemical Society, 2011, 卷号: 158, 期号: 3, 页码: H239-H248
作者:
Wu, Lixiao
;
Yan, Changfeng
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  |  
浏览/下载:0/0
  |  
提交时间:2020/11/14
Chemical analysis
Polishing
Pressure distribution
Topography
Chemical mechanical polishing(CMP)
Chemical-mechanical polishing process
Contact pressure distribution
Different densities
Linear combinations
Magnitude spectrum
Polishing parameters
Three-dimensional (3D) solids
Influence of rotor's radial rub-impact on imbalance responses
期刊论文
2010, 2010
Yuan, Zhenwei
;
Chu, Fulei
;
Wang, Sanbao
;
Yue, Ximing
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  |  
浏览/下载:4/0
The calibration of faint simulation star magnitude based on single photon count technique (EI CONFERENCE)
会议论文
International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Imaging Detectors and Applications, June 17, 2009 - June 19, 2009, Beijing, China
Gan X.-J.
;
Guo J.
;
Xu S.-Y.
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浏览/下载:22/0
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提交时间:2013/03/25
A calibration method of faint star magnitude of the star scene simulation device is proposed in this paper. In the research of simulation star magnitude
luminometers and CCD devices are the general calibration devices which are used to measure the illumination intensity and calibrate its magnitude. But if the simulation magnitude is only sixth magnitude
its illumination intensity is only 1.010-8 Lux. This illumination intensity level is the lowest illumination intensity that the commercial luminometer can detect. Hence the simulation star magnitude lower than six magnitude cannot be calibrated by luminoters. Likewise CCD devices also need an additive cooler in this case. When the single photon characteristic is presented due to the low luminosity of simulating light sources
the simulation star magnitude can be calibrated by detecting its photon flux of radiation with the method of single photon count. In this paper the detection principle of single photon based on a compact designed PMT detecting of the radiation level of simulation star magnitude is advanced. Especially a spectrum match method is proved theoretically to be an effective means for selecting PMT photosensitive type. In the case of the detection object of the simulation star in visible wavelength
a analysis indicates that the material of tri-alkali cathode materials its best choice after being compared the Signal-to-Noise of photon detector of several PMT photosensitive materials based on the different spectrum match ratio of different object light sources and different cathode materials. An experiment is employed to show the relationship of control voltage of PMT and its dark counter
the relationship of the environment temperature of PMT and its dark counter
which proves its only decades of CPS at room temperature. The so low dark counter avoids a bulky cooler and is convenient for installing it on the star scene simulation equipment. Finally in the experiment of calibrating the simulation star magnitudes the ability of its calibration is confirmed to reaches up to 12m
meanwhile its calibration error is within 0.2m. 2009 SPIE.
3-D modeling of wafer topography's effect on chemical mechanical polishing process
会议论文
Vienna, Austria, October 4, 2009 - October 9, 2009
作者:
Wu, Lixiao
;
Yan, Changfeng
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  |  
浏览/下载:3/0
  |  
提交时间:2020/11/15
Chemical mechanical polishing
Polishing
Semiconductor materials
Silicon wafers
Chemical-mechanical polishing process
Complicated topographies
Contact pressures
Linear combinations
Magnitude spectrum
Polishing parameters
Solid-solid contacts
Wafer topography
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