An analytical model of contact pressure caused by 2-D wafer topography in chemical-mechanical polishing process

doi:10.1149/1.3694378

CORC > 兰州理工大学 > 兰州理工大学 > 机电工程学院

	An analytical model of contact pressure caused by 2-D wafer topography in chemical-mechanical polishing process
	Wu, Lixiao
	2012
会议日期	March 18, 2012 - March 19, 2012
会议地点	Shanghai, China
关键词	Chemical analysis Geometry Polishing Semiconductor device manufacture Silicon wafers Topography Chemical mechanical polishing(CMP) Chemical-mechanical polishing process Contact pressures Elastic half space Linear time-invariant system Magnitude spectrum Pattern features Wafer topography
卷号	44
期号	1
DOI	10.1149/1.3694378
页码	621-628
英文摘要	Topography on wafer surface affects chemical-mechanical polishing (CMP) greatly. In this paper, 2-D wafer topography's effects on the contact pressure in CMP are investigated and calculated. It is found that the wafer can be treated as a rigid punch and pad as an elastic half space when the effects of the pattern features on the wafer surface are investigated. Based on the linear small strain theory of elasticity, the formula of calculating the contact pressure between the wafer and the pad is given. The performance of CMP system is shown to be a linear time invariant (LTI) system in a mathematical way. The magnitude spectra and phase spectra of the system are obtained exactly by the formula. The contact pressure for 2-D wafer topography during CMP can be calculated easily by the formula. © The Electrochemical Society.
会议录	ECS Transactions
会议录出版者	Electrochemical Society Inc.
语种	英语
ISSN号	19385862
内容类型	会议论文
源URL	[http://ir.lut.edu.cn/handle/2XXMBERH/115997]
专题	机电工程学院
作者单位	School of Mechanical and Electronical Engineering, Lanzhou University of Technology, Lanzhou 730050, China
推荐引用方式 GB/T 7714	Wu, Lixiao. An analytical model of contact pressure caused by 2-D wafer topography in chemical-mechanical polishing process[C]. 见:. Shanghai, China. March 18, 2012 - March 19, 2012.