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浏览/检索结果: 共6条，第1-6条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Multi-bit nonvolatile flip-flop based on NAND-like spin transfer torque MRAM 会议论文 IEEE/IFIP International Conference on VLSI and System-on-Chip, VLSI-SoC, 2018-10-08 作者:  Deng, E.;  Wang, Z.;  Kang, W.;  Wei, S.;  Zhao, W. 收藏  |  浏览/下载：13/0  |  提交时间：2019/12/30 CMOS integrated circuits  Magnetic devices  Magnetic recording  NAND circuits  Standby power systems  Torque  Tunnel junctions  VLSI circuits  Computing system  Magnetic tunnel junction  Non-volatile flip-flops  Spin orbits  Spin transfer torque  Spintronics device  Switching delay  Switching power  Flip flop circuits   Exploring Hybrid STT-MTJ/CMOS Energy Solution in Near-/Sub-Threshold Regime for IoT Applications 期刊论文 IEEE TRANSACTIONS ON MAGNETICS, 2018, 卷号: 54 作者:  Cai, Hao;  Wang, You;  Naviner, Lirida Alves de Barros;  Yang, Jun;  Zhao, Weisheng 收藏  |  浏览/下载：12/0  |  提交时间：2019/12/30 Flip-flop (FF)  forward back bias (FBB)  fully depleted silicon on insulator (FD-SOI)  magnetic tunnel junction (MTJ)/CMOS integration  near-/sub-threshold  ultralow power   Multi-bit nonvolatile flip-flop based on NAND-like spin transfer torque MRAM 会议论文 PROCEEDINGS OF THE 2018 26TH IFIP/IEEE INTERNATIONAL CONFERENCE ON VERY LARGE SCALE INTEGRATION (VLSI-SOC), 2018-01-01 作者:  Deng, Erya;  Wang, Zhaohao;  Kang, Wang;  Wei, Shaoqian;  Zhao, Weisheng 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/30 flip-flop  magnetic tunnel junction  spin-transfer torque  spin orbit torque   Low Power Magnetic Flip-Flop Optimization With FDSOI Technology Boost 期刊论文 IEEE TRANSACTIONS ON MAGNETICS, 2016, 卷号: 52 作者:  Cai, Hao;  Wang, You;  De Naviner, Lirida Alves Barros;  Zhao, Weisheng 收藏  |  浏览/下载：11/0  |  提交时间：2019/12/30 Body bias (BB)  energy-delay optimization  fully depleted silicon-on-insulator (FDSOI)  magnetic flip-flop (MFF)  magnetic tunnel junction (MTJ)  poly bias (PB)   A process-variation-resilient methodology of circuit design by using asymmetrical forward body bias in 28 nm FDSOI 期刊论文 MICROELECTRONICS RELIABILITY, 2016, 卷号: 64, 页码: 26-30 作者:  Wang, Y.;  Cai, H.;  Naviner, L. A. B.;  Zhao, X. X.;  Zhang, Y. 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/30 Process variation  Variability analysis  Magnetic flip-flop  Asymmetrical forward body bias  FDSOI   A process-variation-resilient methodology of circuit design by using asymmetrical forward body bias in 28 nm FDSOI 会议论文 27th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Halle, GERMANY, 2016-09-01 作者:  Wang, Y.;  Cai, H.;  Naviner, L. A. B.;  Zhao, X. X.;  Zhang, Y. 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/30 Process variation  Variability analysis  Magnetic flip-flop  Asymmetrical forward body bias  FDSOI