×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
半导体研究所 [2]
长春应用化学研究所 [2]
北京大学 [1]
兰州大学 [1]
长春光学精密机械与物... [1]
上海大学 [1]
更多...
内容类型
期刊论文 [6]
会议论文 [2]
发表日期
2016 [1]
2015 [1]
2011 [1]
2010 [2]
2006 [1]
2003 [2]
更多...
学科主题
chemistry [1]
光电子学 [1]
半导体物理 [1]
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共8条,第1-8条
帮助
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
作者升序
作者降序
题名升序
题名降序
发表日期升序
发表日期降序
提交时间升序
提交时间降序
Recent Progress in Organic-Inorganic Hybrid Perovskite Materials for Luminescence Applications
期刊论文
ACTA PHYSICO-CHIMICA SINICA, 2016, 卷号: 32, 期号: 8, 页码: 1894-1912
作者:
Xiao, J
;
Zhang, HL
收藏
  |  
浏览/下载:148/0
  |  
提交时间:2017/01/12
Perovskite
Morphology
Spectrum adjustability
Light-emitting diode
Laser
Light-emitting field effect transistor
Development and progress in piezotronics
期刊论文
NANO ENERGY, 2015
Wen, Xiaonan
;
Wu, Wenzhuo
;
Pan, Caofeng
;
Hu, Youfan
;
Yang, Qing
;
Wang, Zhong Lin
收藏
  |  
浏览/下载:1/0
  |  
提交时间:2017/12/03
Piezotronic
Piezophototronic
Transistor
ZnO
Sensing
Performance enhancement
LIGHT-EMITTING-DIODES
FIELD-EFFECT TRANSISTOR
INGAN QUANTUM-WELLS
SINGLE ZNO NANOWIRE
THIN-FILMS
ENHANCED PERFORMANCE
PIEZO-PHOTOTRONICS
DEVICES
GAN
ULTRAVIOLET
Adhesive lithography for fabricating organic electronic and optoelectronics devices
期刊论文
nanoscale, 2011, 卷号: 3, 期号: 7, 页码: 2663-2678
Wang Z
;
Xing RB
;
Yu XH
;
Han YC
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2012/06/11
THIN-FILM TRANSISTORS
FIELD-EFFECT TRANSISTOR
LIGHT-EMITTING-DIODES
SELF-ASSEMBLED MONOLAYERS
SOFT LITHOGRAPHY
METAL-FILMS
NANOIMPRINT LITHOGRAPHY
PRINTING TECHNIQUES
ELASTOMERIC STAMP
CHANNEL-LENGTH
Field effect transistor behavior of organic light-emitting diodes with a modified configuration of ITO anode
期刊论文
SYNTHETIC METALS, 2010, 卷号: 160, 页码: 2417-2421
作者:
Lu, Lin[1]
;
Yu, Fangfang[2]
;
Long, Li[3]
;
Yu, Jianning[4]
;
Wei, Bin[5]
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2019/04/30
Field effect transistor
Organic light emitting diodes
Channel length
The formation of different structures of poly(3-hexylthiophene) film on a patterned substrate by dip coating from aged solution
期刊论文
nanotechnology, 2010, 卷号: 21, 期号: 14, 页码: 文献编号:145303
Xue LJ
;
Gao X
;
Zhao K
;
Liu JG
;
Yu XH
;
Han YC
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2012/06/07
POLYTHIOPHENE THIN-FILM
FIELD-EFFECT TRANSISTOR
LIGHT-EMITTING-DIODES
REGIOREGULAR POLY(3-HEXYLTHIOPHENE)
CONJUGATED POLYMERS
PHOTOVOLTAIC CELLS
SINGLE-CRYSTALS
EFFECT MOBILITY
SURFACES
GROWTH
Design of an improved data signal timing for an amorphous silicon active-matrix organic LED display (EI CONFERENCE)
会议论文
ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China
Liao Y.-P.
;
Zhang Z.-W.
;
Shao X.-B.
;
Liu J.-E.
;
Guo-zhu F. U.
;
Jing H.
;
Qiu F.-B.
;
Kai M. A.
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2013/03/25
The most critical issue in the design of an active matrix organic light emitting diode (AM-OLED) display pixel is the pixel to the pixel luminance uniformity. By substituting four-thin film transistor (TFT) pixel circuit for two-TFT pixel circuit
the luminous uniformity has great improved
but it requires more components than the two-TFT pixel circuit. There are some barriers needed to resolve to utilize hydrogenated amorphous silicon transistor to lit OLED
such as low field effect mobility
low output current and threshold voltage shift. In this article
a two-a-Si:H TFT pixel circuit was designed
which consisted of one named switching TFT and the other named driving TFT. The driving TFT gate line structure modified and a data signal timing improved were reported. The modified driving TFT can provide enough current about 30 microampere to lit OLED and the novel data signal timing can provide a constant current to OLED by restraining the driving TFT threshold voltage variation. In the novel data signal timing
the control signals to the driving TFT gate include a data signal and a reverse data signal. The signals alteration is performed either at a frame rate or at a line rate. By experiments
the driving TFT output current value is plotted as a function of the time in different reversed voltage value. When the magnitude of the positive data signal and the negative data signal is equal
the variety of Vth
is smallest
about 1.28V after a fixed stressing time of 1.33104min
which shows the novel data signal timing can improved the driving TFT output-input current stability.
Design of high brightness cubic-GaN LEDs grown on GaAs substrate
会议论文
11th seoul international symposium on the physics of semiconductors and applications, seoul, south korea, aug 20-23, 2002
作者:
Zhao DG
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2010/11/15
wafer bunding
cubic GaN
LIGHT-EMITTING-DIODES
FIELD-EFFECT TRANSISTOR
SINGLE-CRYSTAL GAN
MICROWAVE PERFORMANCE
MIRROR
JUNCTION
Design of high brightness cubic-GaN LEDs grown on GaAs substrate
期刊论文
journal of the korean physical society, 2003, 卷号: 42, 期号: 0, 页码: s753-s756
作者:
Zhao DG
收藏
  |  
浏览/下载:51/0
  |  
提交时间:2010/08/12
wafer bunding
cubic GaN
LIGHT-EMITTING-DIODES
FIELD-EFFECT TRANSISTOR
SINGLE-CRYSTAL GAN
MICROWAVE PERFORMANCE
MIRROR
JUNCTION
©版权所有 ©2017 CSpace - Powered by
CSpace