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Field effect transistor behavior of organic light-emitting diodes with a modified configuration of ITO anode
Lu, Lin[1]; Yu, Fangfang[2]; Long, Li[3]; Yu, Jianning[4]; Wei, Bin[5]; Zhang, Jianhua[6]; Ichikawa, Musubu[7]
刊名SYNTHETIC METALS
2010
卷号160页码:2417-2421
关键词Field effect transistor Organic light emitting diodes Channel length
ISSN号0379-6779
URL标识查看原文
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/2311140
专题上海大学
作者单位1.[1]Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China.
2.[2]Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China.
3.[3]Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China.
4.[4]Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China.
5.[5]Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China.
6.[6]Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China.
7.[7]Shinshu Univ, Dept Funct Polymer Sci, Nagano 3868567, Japan.
推荐引用方式
GB/T 7714
Lu, Lin[1],Yu, Fangfang[2],Long, Li[3],et al. Field effect transistor behavior of organic light-emitting diodes with a modified configuration of ITO anode[J]. SYNTHETIC METALS,2010,160:2417-2421.
APA Lu, Lin[1].,Yu, Fangfang[2].,Long, Li[3].,Yu, Jianning[4].,Wei, Bin[5].,...&Ichikawa, Musubu[7].(2010).Field effect transistor behavior of organic light-emitting diodes with a modified configuration of ITO anode.SYNTHETIC METALS,160,2417-2421.
MLA Lu, Lin[1],et al."Field effect transistor behavior of organic light-emitting diodes with a modified configuration of ITO anode".SYNTHETIC METALS 160(2010):2417-2421.
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