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长春光学精密机械与物... [2]

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	Degradation characteristics of electron and proton irradiated InGaAsP/InGaAs dual junction solar cell 期刊论文 SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2020, 卷号: 206, 期号: 3, 页码: 1-7 作者: Zhao, XF (Zhao, X. F.)[ 1 ]; Aierken, A (Aierken, A.)[ 1,2 ]; Heini, M (Heini, M.)[ 1,3 ]; Tan, M (Tan, M.)[ 4 ]; Wu, YY (Wu, Y. Y.)[ 4 ] 收藏 \| 浏览/下载：39/0 \| 提交时间：2020/04/21 InGaAsP/InGaAs solar cell Electron and proton irradiation Degradation Equivalent displacement damage dose model
	新型结构HBT设计与材料生长研究学位论文博士: 中国科学院研究生院（上海微系统与信息技术研究所） , 2008 艾立鹍收藏 \| 浏览/下载：98/0 \| 提交时间：2012/03/06 异质结双极晶体管（HBT）　气态源分子束外延（GSMBE）　GaAs 　InP 　InGaP 　InGaAs 　InGaAsP
	Material growth and device fabrication of highly strained ingaas/ingaasp long wavelength distributed feedback lasers 期刊论文 Acta physica sinica, 2006, 卷号: 55, 期号: 10, 页码: 5216-5220 作者: Pan Jiao-Qing; Zhao Qian; Zhu Hong-Liang; Zhao Ling-Juan; Ding Ying 收藏 \| 浏览/下载：17/0 \| 提交时间：2019/05/12 Mocvd Ingaas/ingaasp Strained quantum well Distributed feedback laser
	Material growth and device fabrication of highly strained InGaAs/InGaAsP long wavelength distributed feedback lasers 期刊论文 acta physica sinica, 2006, 卷号: 55, 期号: 10, 页码: 5216-5220 Pan JQ (Pan Jiao-Qing); Zhao Q (Zhao Qian); Zhu HL (Zhu Hong-Liang); Zhao LJ (Zhao Ling-Juan); Ding Y (Ding Ying); Wang BJ (Wang Bao-Jun); Zhou F (Zhou Fan); Wang LF (Wang Lu-Feng); Wang W (Wang Wei) 收藏 \| 浏览/下载：70/0 \| 提交时间：2010/04/11 MOCVD InGaAs/InGaAsP strained quantum well distributed feedback laser TUNABLE DIODE-LASER QUANTUM-WELL LASER 1.74 MU-M SPECTROMETER METHANE POWER
	Spontaneous emission and gain characteristics of InGaAs/InGaAsP quantum well laser (EI CONFERENCE) 会议论文 Optoelectronic Devices and Integration, November 8, 2004 - November 11, 2004, Beijing, China Ning Y.; Sung Y.; Jin Z.; Wang L. 收藏 \| 浏览/下载：16/0 \| 提交时间：2013/03/25 Long wavelength InGaAs/InGaAsP multiple quantum well laser is grown by MOCVD. The characteristics of spontaneous emission amplified spontaneous emission and modal gain of the MQW is investigated by using single-pass multi-section technique. The amplified spontaneous emission is around a wavelength of 1500nm dependent on the temperature and the current density. The modal gain spectra show a red shift with increasing temperature. The peak modal gain exhibits a decrease with increasing temperature from 140K to 300K. The loss measurements shows that the main loss mechanism in the structure might be the free carrier absorption in the doped cladding layers and a internal modal loss of about 10cm-1.
	半导体激光器的热特性及封装技术研究学位论文硕士: 中国科学院研究生院（上海微系统与信息技术研究所） , 2003 何友军收藏 \| 浏览/下载：36/0 \| 提交时间：2012/03/06 半导体激光器:7882 热特性:3125 封装技术:3105 多量子阱激光器:2255 量子级联激光器:2255 脊波导:1571 InGaAsP:1362 InGaAs／InP:1181 散热效果:1168 烧结方式:1092
	InGaAs/InGaAsP microdisk lasers grown by GSMBE (EI CONFERENCE) 会议论文 11th International Conference on Molecular Beam Epitaxy, September 11, 2000 - September 15, 2000, Bijing, China Wu G.; Wang X. H.; Zheng Q.; Ren D. C.; Zhang X. D. 收藏 \| 浏览/下载：12/0 \| 提交时间：2013/03/25 Optical resonance modes have been observed in optically pumped microdisk cavities fabricated from 80 A/50 A InGaAs/InGaAsP multiple quantum wells structures grown by gas-source molecular beam epitaxy. We have achieved optically pumped InGaAs/InGaAsP multiquantum wells microdisk lasers at a pump power threshold of Pth = 150 W at pump wavelength = 514.5 nm which was measured for a 10 m-diameter disk with lasing emission wavelength near = 1.6 m. 2001 Elsevier Science B.V.

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