Material growth and device fabrication of highly strained InGaAs/InGaAsP long wavelength distributed feedback lasers

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Material growth and device fabrication of highly strained InGaAs/InGaAsP long wavelength distributed feedback lasers
	Pan JQ (Pan Jiao-Qing) ; Zhao Q (Zhao Qian) ; Zhu HL (Zhu Hong-Liang) ; Zhao LJ (Zhao Ling-Juan) ; Ding Y (Ding Ying) ; Wang BJ (Wang Bao-Jun) ; Zhou F (Zhou Fan) ; Wang LF (Wang Lu-Feng) ; Wang W (Wang Wei)
刊名	acta physica sinica
	2006
卷号	55 期号:10 页码:5216-5220
关键词	MOCVD InGaAs/InGaAsP strained quantum well distributed feedback laser TUNABLE DIODE-LASER QUANTUM-WELL LASER 1.74 MU-M SPECTROMETER METHANE POWER
ISSN号	1000-3290
通讯作者	pan, jq, chinese acad sci, inst semicond, optoelect res & dev ctr, beijing 100083, peoples r china. e-mail: jqpan@red.semi.ac.cn
中文摘要	1.6-1.7 mu m highly strained ingaas/ingaasp distributed feedback lasers was grown and fabricated by low pressure mentalorganic chemical vapor deposition. high quality highly strained ingaas/inp materials were obtained by using strain buffer layer. four pairs of highly strained quantum wells were used in the devices and carrier blocking layer was used to improve the temperature characteristics of the devices. the uncoated 1.66 mu m and 1.74 mu m lasers with ridge wave guide 3 mu m wide have low threshold current (< 15ma) and high output power (> 14mw at 100ma). in the temperature range from 10 degrees c to 40 degrees c, the characteristic temperature t-0 of the 1.74 mu m laser is 57k, which is comparable to that of the 1.55 mu m-wavelength ingaasp/inp-dfb laser.
学科主题	光电子学
收录类别	SCI
语种	中文
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10358]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Pan JQ ,Zhao Q ,Zhu HL ,et al. Material growth and device fabrication of highly strained InGaAs/InGaAsP long wavelength distributed feedback lasers[J]. acta physica sinica,2006,55(10):5216-5220.
APA	Pan JQ .,Zhao Q .,Zhu HL .,Zhao LJ .,Ding Y .,...&Wang W .(2006).Material growth and device fabrication of highly strained InGaAs/InGaAsP long wavelength distributed feedback lasers.acta physica sinica,55(10),5216-5220.
MLA	Pan JQ ,et al."Material growth and device fabrication of highly strained InGaAs/InGaAsP long wavelength distributed feedback lasers".acta physica sinica 55.10(2006):5216-5220.