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北京大学 [12]
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期刊论文 [28]
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浏览/检索结果:
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Hole mobility in InSb-based devices: Dependence on surface orientation, body thickness, and strain
其他
2015-01-01
Chang, Pengying
;
Liu, Xiaoyan
;
Zeng, Lang
;
Du, Gang
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/03
Surface orientation
Strain
Hole mobility
InSb
III-V semiconductor
Modeling
V COMPOUND SEMICONDUCTORS
DEFORMATION POTENTIALS
INVERSION-LAYERS
Simulation Study of the Impact of Quantum Confinement on the Electrostatically Driven Performance of n-type Nanowire Transistors
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015
Wang, Yijiao
;
Al-Ameri, Talib
;
Wang, Xingsheng
;
Georgiev, Vihar P.
;
Towie, Ewan
;
Amoroso, Salvatore Maria
;
Brown, Andrew R.
;
Cheng, Binjie
;
Reid, David
;
Riddet, Craig
;
Shifren, Lucian
;
Sinha, Saurabh
;
Yeric, Greg
;
Aitken, Robert
;
Liu, Xiaoyan
;
Kang, Jinfeng
;
Asenov, Asen
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/03
CMOS
electrostatics
nanowire transistors (NWs)
performance
quantum effects
TCAD
STATISTICAL VARIABILITY
INVERSION-LAYERS
GATE
CMOS
GENERATION
ELECTRON
DENSITY
FINFETS
DEVICES
MOSFETS
Hole mobility in InSb-based devices: Dependence on surface orientation, body thickness, and strain
期刊论文
44th European Solid-State Device Research Conference (ESSDERC), 2015
Chang, Pengying
;
Liu, Xiaoyan
;
Zeng, Lang
;
Du, Gang
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2017/12/03
Surface orientation
Strain
Hole mobility
InSb
III-V semiconductor
Modeling
V COMPOUND SEMICONDUCTORS
DEFORMATION POTENTIALS
INVERSION-LAYERS
Numerical Electron Mobility Model of Nanoscale Symmetric, Asymmetric and Independent Double-Gate MOSFETs
期刊论文
journal of computational and theoretical nanoscience, 2013
He, Jin
;
Xu, Yiwen
;
Chen, Lin
;
Zhang, Lining
;
Zhou, Xingye
;
Ma, Chenyue
;
Cao, Yu
;
Ye, Yun
;
Wang, Cheng
;
Liang, Hailang
;
Chan, Mansun
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/13
DG MOSFETs
Mobility
Phonon Scattering
Surface Roughness Scattering
Symmetric and Asymmetric
Dependent and Independent
SI INVERSION-LAYERS
INTERFACE-ROUGHNESS DEPENDENCE
SURFACE-ROUGHNESS
LIMITED MOBILITY
VOLUME INVERSION
FIELD
PERFORMANCE
TRANSISTORS
DEVICE
CMOS
Model-Based Prediction of the Plasma Oscillation Excitation Response Characteristics of a High-Electron Mobility Transistor-Based Terahertz Photomixer with the Cap Region
期刊论文
journal of computational and theoretical nanoscience, 2012
Chen, Yu
;
He, Jin
;
Liang, Hai Lang
;
Ma, Yong
;
Chen, Qin
;
Su, Yanmei
;
He, Hong Yu
;
Chan, Mansun
;
Cao, Juncheng
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2015/11/13
Terahertz Photomixer
HEMT
Analytical Model
Plasma Excitation
Two Dimensional Gas (2DEG)
FIELD-EFFECT TRANSISTOR
INVERSION-LAYERS
RADIATION
EMISSION
FLUID
MECHANISM
GAAS
Inversion of TEM conductive thin layer based on genetic algorithm
会议论文
作者:
Wenbo, Guo
;
Guoqiang, Xue
;
Nannan, Zhou
;
Xiu, Li
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2019/12/10
Calculation precision
Calculation speed
Feasible regions
Imaging parameters
Longitudinal conductances
Non linear inversion
Thin layers
Transient electromagnetic methods
k middot p and Monte Carlo studies of hole mobility in strained-Si pMOS inversion layers
期刊论文
2010, 2010
Zhao Ji
;
Zou Jianping
;
Tan Yaohua
;
Yu Zhiping
收藏
  |  
浏览/下载:4/0
A universal electron mobility model of strained Si MOSFETs based on variational wave functions
期刊论文
2010, 2010
Liang, Renrong
;
Li, Debin
;
Xu, Jun
收藏
  |  
浏览/下载:3/0
Rashba spin-orbit coupling effect on the noise in quasi-one-dimensional nanowires under an applied magnetic field
期刊论文
2010, 2010
Li, YX
;
Guo, Y
;
Li, BZ
收藏
  |  
浏览/下载:1/0
Spin filtering and spin-polarization reversal in multilayered ferromagnetic metal/semiconductor heterostructures
期刊论文
2010, 2010
Guo, Y
;
Yu, XW
;
Li, YX
收藏
  |  
浏览/下载:4/0
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