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CORC

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Single peak deep ultraviolet emission and high internal quantum efficiency in AlGaN quantum wells grown on large miscut sapphire substrates 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2019, 卷号: 129, 页码: 20-27
作者:  Xu, Houqiang;  Jiang, Jie'an;  Sheikhi, Moheb;  Chen, Zhaoying;  Hoo, Jason
收藏  |  浏览/下载：28/0  |  提交时间：2019/12/18
Fabrication and properties of self-standing GaN-based film with a strong phase-separated InGaN/GaN layer in neutral electrolyte 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 722, 页码: 767-771
作者:  Gao, Qingxue;  Xiao, Hongdi;  Cao, Dezhong;  Yang, Xiaokun;  Liu, Jiandiang
收藏  |  浏览/下载：8/0  |  提交时间：2019/12/12
Development and progress in piezotronics 期刊论文
NANO ENERGY, 2015
Wen, Xiaonan; Wu, Wenzhuo; Pan, Caofeng; Hu, Youfan; Yang, Qing; Wang, Zhong Lin
收藏  |  浏览/下载：1/0  |  提交时间：2017/12/03
Pyramidal dislocation induced strain relaxation in hexagonal structured InGaN/AlGaN/GaN multilayer 期刊论文
Journal of Applied Physics, 2012, 卷号: 112, 期号: 8
P. F. Yan; K. Du; M. L. Sui
收藏  |  浏览/下载：86/0  |  提交时间：2013/02/05
Study on electroluminescence spectra of In/sub x/Ga/sub 1-x /N/GaN-MQWs materials with high indium contents 期刊论文
2010, 2010
Shao Jia-Ping; Hu Hui; Guo Wen-Ping; Wang Lai; Luo Yi; Sun Chang-Zheng; Hao Zhi-Biao
收藏  |  浏览/下载：4/0
A study of indium incorporation in In-rich InGaN grown by MOVPE 期刊论文
applied surface science, 2010, 卷号: 256, 期号: 10, 页码: 3352-3356
作者:  Wei HY;  Song HP
收藏  |  浏览/下载：139/13  |  提交时间：2010/04/22
Growth mode and strain evolution during InN growth on GaN(0001) by molecular-beam epitaxy 期刊论文
applied physics letters, 2002, 卷号: 81, 期号: 21, 页码: 3960-3962
Ng YF; Cao YG; Xie MH; Wang XL; Tong SY
收藏  |  浏览/下载：38/0  |  提交时间：2010/08/12
MOCVD growth of cubic GaN: Materials and devices 会议论文
international workshop on nitride semiconductors (iwn 2000), nagoya, japan, sep 24-27, 2000
作者:  Zhao DG;  Zhang SM
收藏  |  浏览/下载：17/0  |  提交时间：2010/10/29

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