MOCVD growth of cubic GaN: Materials and devices

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	MOCVD growth of cubic GaN: Materials and devices
	Zhao DG; Zhang SM
	2000
会议名称	international workshop on nitride semiconductors (iwn 2000)
会议日期	sep 24-27, 2000
会议地点	nagoya, japan
关键词	MOCVD GaN InGaN cubic LED CHEMICAL-VAPOR-DEPOSITION MOLECULAR-BEAM EPITAXY GALLIUM NITRIDE PHASE EPITAXY INGAN FILMS ELECTROLUMINESCENCE ZINCBLENDE WURTZITE MBE
页码	64-69
通讯作者	yang h chinese acad sci inst semicond state key lab integrated optoelect natl res ctr optoelect beijing 100083 peoples r china.
中文摘要	many impressive progresses have been made recently on the growth of cubic-phase gan by mbe and mocvd. in this paper, some of our recent progress will be reviewed, including the growth of high quality cubic ingan films, ingan/gan heterostructure blue and green leds. cubic-phase gan films were grown on gaas (100) substrates by mocvd. growth conditions were optimized to obtain pure cubic phase gan films up to a thickness of 4 mum. an anomalous compressive strain was found in the as-grown gan films in spite of a smaller lattice constant for gan compared with that of gaas substrates. the photoluminescence fwhm of high quality ingan epilayers was less than 100 mev the ingan/gan heterostructure blue led has intense electroluminescence with a fwhm of 20 nm.
英文摘要	many impressive progresses have been made recently on the growth of cubic-phase gan by mbe and mocvd. in this paper, some of our recent progress will be reviewed, including the growth of high quality cubic ingan films, ingan/gan heterostructure blue and green leds. cubic-phase gan films were grown on gaas (100) substrates by mocvd. growth conditions were optimized to obtain pure cubic phase gan films up to a thickness of 4 mum. an anomalous compressive strain was found in the as-grown gan films in spite of a smaller lattice constant for gan compared with that of gaas substrates. the photoluminescence fwhm of high quality ingan epilayers was less than 100 mev the ingan/gan heterostructure blue led has intense electroluminescence with a fwhm of 20 nm.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:36:51z (gmt). no. of bitstreams: 1 2882.pdf: 389364 bytes, checksum: 18fedc6e44df1c67e27f7649f4536f40 (md5) previous issue date: 2000; japan soc appl phys, solid state phys & applicat div.; japan soc promot sci, comm short wavelength optoelectr devices, 162.; japan soc promot sci, comm convers light & elect, 125.; chinese acad sci, inst semicond, state key lab integrated optoelect, natl res ctr optoelect, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	japan soc appl phys, solid state phys & applicat div.; japan soc promot sci, comm short wavelength optoelectr devices, 162.; japan soc promot sci, comm convers light & elect, 125.
会议录	proceedings of the international workshop on nitride semiconductors, 1
会议录出版者	inst pure applied physics ; daini toyokaiji bldg 24-8 shinbashi 4 chome, tokyo, 105-0004, japan
会议录出版地	daini toyokaiji bldg 24-8 shinbashi 4 chome, tokyo, 105-0004, japan
学科主题	半导体材料
语种	英语
ISBN号	4-900526-13-4
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/13709]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhao DG,Zhang SM. MOCVD growth of cubic GaN: Materials and devices[C]. 见:international workshop on nitride semiconductors (iwn 2000). nagoya, japan. sep 24-27, 2000.