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Investigation on the surface modification of TiO2 nanohexagon arrays based photoanode with SnO2 nanoparticles for highly-efficient dye-sensitized solar cells 期刊论文
Materials Research Bulletin, 2019, 卷号: 109, 页码: 21-28
作者:  Javed, Hafiz Muhammad Asif;  Que, Wenxiu;  Yin, Xingtian;  Kong, Ling Bing;  Iqbal, Javed
收藏  |  浏览/下载：7/0  |  提交时间：2019/11/19
A 1-40-GHz LNA MMIC Using Multiple Bandwidth Extension Techniques 期刊论文
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2019, 卷号: Vol.29 No.5, 页码: 336-338
作者:  Hu, J.a;  Ma, K.a,b
收藏  |  浏览/下载：13/0  |  提交时间：2019/11/21
Analysis and Design of a 0.1–23 GHz LNA MMIC Using Frequency-Dependent Feedback 期刊论文
IEEE Transactions on Circuits and Systems II: Express Briefs, 2019, 卷号: Vol.66 No.9, 页码: 1517-1521
作者:  Hu, J.a;  Ma, K.a,b;  Mou, S.a;  Meng, F.a
收藏  |  浏览/下载：12/0  |  提交时间：2019/11/21
Enhancement of Negative Differential Mobility Effect in Recessed Barrier Layer AlGaN/GaN HEMT for Terahertz Applications 期刊论文
IEEE Transactions on Electron Devices, 2019, 卷号: Vol.66 No.3, 页码: 1236-1242
作者:  Hongliang Zhao;  Lin-An Yang;  Hao Zou;  Xiao-hua Ma;  Yue Hao
收藏  |  浏览/下载：36/0  |  提交时间：2019/12/17
Reduced reverse gate leakage current for GaN HEMTs with 3 nm Al/40 nm SiN passivation layer. 期刊论文
Applied Physics Letters, 2019, 卷号: Vol.114 No.1
作者:  Zhang, Sheng;  Wei, Ke;  Ma, Xiao-Hua;  Hou, Bin;  Liu, Guo-Guo
收藏  |  浏览/下载：11/0  |  提交时间：2019/12/17
High-performance phototransistor based on individual high electron mobility MnWO4 nanoplate 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2018, 卷号: 762, 页码: 933-940
作者:  Zhang, XL;  Jiang, YA;  Liu, BD;  Yang, WJ;  Li, J
收藏  |  浏览/下载：24/0  |  提交时间：2018/12/25
Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 4
作者:  Li, Jin-Lun;  Cui, Shao-Hui;  Xu, Jian-Xing;  Cui, Xiao-Ran;  Guo, Chun-Yan
收藏  |  浏览/下载：43/0  |  提交时间：2018/05/14
Paralleled GaN DHEMTs integrated cascode GaN switch for high-current applications 期刊论文
ELECTRONICS LETTERS, 2018, 卷号: 54, 页码: 899-900
作者:  Zhu, Tianhua;  Zhuo, Fang
收藏  |  浏览/下载：16/0  |  提交时间：2019/11/19
TCAD Simulation for nonresonant terahertz detector based on double-channel GaN/AlGaN high-electron-mobility transistor 期刊论文
IEEE Transactions on Electron Devices, 2018, 卷号: 65, 页码: 4807-4813
作者:  Meng, Qingzhi;  Lin, Qijing;  Jing, Weixuan;  Han, Feng;  Zhao, Man
收藏  |  浏览/下载：44/0  |  提交时间：2019/11/19
Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices 期刊论文
MICROMACHINES, 2018, 卷号: 9
作者:  Huang, Huolin;  Li, Feiyu;  Sun, Zhonghao;  Cao, Yaqing
收藏  |  浏览/下载：7/0  |  提交时间：2019/12/02

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