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	Reduced reverse gate leakage current for GaN HEMTs with 3 nm Al/40 nm SiN passivation layer.
	Zhang, Sheng; Wei, Ke; Ma, Xiao-Hua; Hou, Bin; Liu, Guo-Guo; Zhang, Yi-chuan; Wang, Xin-Hua; Zheng, Ying-Kui; Huang, Sen; Li, Yan-Kui
刊名	Applied Physics Letters
	2019
卷号	Vol.114 No.1
关键词	CHEMICAL vapor deposition *STRAY currents *GALLIUM nitride *HIGH electron mobility transistor circuits *PASSIVATION *INTEGRATED circuit passivation
ISSN号	0003-6951
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4742063
专题	湖南大学
作者单位	1.School of Advanced Materials and Nanotechnology, Xidian University, Shaanxi, Xi'an 710071, People's Republic of China 2.High-Frequency High-Voltage Device and Integrated Circuits Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's Republic of China
推荐引用方式 GB/T 7714	Zhang, Sheng,Wei, Ke,Ma, Xiao-Hua,et al. Reduced reverse gate leakage current for GaN HEMTs with 3 nm Al/40 nm SiN passivation layer.[J]. Applied Physics Letters,2019,Vol.114 No.1.
APA	Zhang, Sheng.,Wei, Ke.,Ma, Xiao-Hua.,Hou, Bin.,Liu, Guo-Guo.,...&Liu, Xin-Yu.(2019).Reduced reverse gate leakage current for GaN HEMTs with 3 nm Al/40 nm SiN passivation layer..Applied Physics Letters,Vol.114 No.1.
MLA	Zhang, Sheng,et al."Reduced reverse gate leakage current for GaN HEMTs with 3 nm Al/40 nm SiN passivation layer.".Applied Physics Letters Vol.114 No.1(2019).

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