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Flattening of low temperature epitaxial ge1-xsnx/ge/si(100) alloys via mass transport during post-growth annealing 期刊论文
Applied surface science, 2011, 卷号: 257, 期号: 9, 页码: 4468-4471
作者:  Wang, Wei;  Su, Shaojian;  Zheng, Jun;  Zhang, Guangze;  Xue, Chunlai
收藏  |  浏览/下载:128/0  |  提交时间:2019/05/12
Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy 期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 4, 页码: 43004
He, Jifang; Shang, Xiangjun; Li, Mifeng; Zhu, Yan; Chang, Xiuying; Ni, Haiqiao; Xu, Yingqiang; Niu, Zhichuan
收藏  |  浏览/下载:76/0  |  提交时间:2012/06/14
Flattening of low temperature epitaxial Ge1-xSnx/Ge/Si(100) alloys via mass transport during post-growth annealing 期刊论文
applied surface science, 2011, 卷号: 257, 期号: 9, 页码: 4468-4471
Wang W; Su SJ; Zheng J; Zhang GZ; Xue CL; Zuo YH; Cheng BW; Wang QM
收藏  |  浏览/下载:103/7  |  提交时间:2011/07/05
Growth of Ge layer on relaxed Ge-rich SiGe by ultrahigh vacuum chemical vapor deposition 期刊论文
2010, 2010
Liu Jialei; Liang Renrong; Wang Jing; Xu Yang; Xu Jun; Liu Zhihong
收藏  |  浏览/下载:5/0


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