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浏览/检索结果: 共4条，第1-4条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序作者升序作者降序提交时间升序提交时间降序题名升序题名降序 Characterization of Transient Threshold Voltage Shifts in Enhancement-and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs 会议论文 作者:  Cui, Miao;  Cai, Yutao;  Lam, Sang;  Liu, Wen;  Zhao, Chun 收藏  |  浏览/下载：6/0  |  提交时间：2019/11/26 AlGaN/GaN MIS-HEMTs  Frequency dependence  Frequency independent  High-voltage switching  Metal-insulator-semiconductors  MIS-HEMT  Threshold voltage shifts  Voltage hysteresis   Investigation of the interface traps and current collapse in LPCVD SiNx/AlGaN/GaN MISHEMTs 会议论文 作者:  Yu, Kun;  Liu, Chao;  Jiang, Huaxing;  Lu, Xing;  Lau, Kei May 收藏  |  浏览/下载：7/0  |  提交时间：2019/11/26 AlGaN/GaN MIS-HEMTs  Current collapse  I-V measurements  Interface traps  LPCVD SiNx  Metal insulator semiconductor high electron mobility transistors (MISHEMT)  Passivation layer  Plasma enhanced chemical vapor depositions (PE CVD)   Suppression of current collapse in AlGaN/GaN MISHEMTs using in-situ SiN gate dielectric and PECVD SiN passivation 会议论文 作者:  Jiang, Huaxing;  Liu, Chao;  Lu, Xing;  Lau, Kei May 收藏  |  浏览/下载：6/0  |  提交时间：2019/11/26 AlGaN/GaN MIS-HEMTs  Current collapse  GaN based  ON/OFF current ratio  Power switching applications  SiN gate dielectrics  Subthreshold slope  Surface passivation   Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With 10(-13) A/mm Leakage Current and 10(12) ON/OFF Current Ratio 期刊论文 ieee electron device letters, 2014 Xu, Zhe; Wang, Jinyan; Cai, Yong; Liu, Jingqian; Jin, Chunyan; Yang, Zhenchuan; Wang, Maojun; Yu, Min; Xie, Bing; Wu, Wengang; Ma, Xiaohua; Zhang, Jincheng; Hao, Yue 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10 Post-gate annealing (PGA)  GaN  enhancement mode  MOSFET  ON/OFF current ratio  mesa isolation current  GAN MIS-HEMTS  AL2O3/GAN MOSFET  INTERFACE