| Suppression of current collapse in AlGaN/GaN MISHEMTs using in-situ SiN gate dielectric and PECVD SiN passivation | |
| Jiang, Huaxing; Liu, Chao; Lu, Xing; Lau, Kei May | |
| 2016 | |
| 关键词 | AlGaN/GaN MIS-HEMTs Current collapse GaN based ON/OFF current ratio Power switching applications SiN gate dielectrics Subthreshold slope Surface passivation |
| 页码 | 289-291 |
| 会议录 | CS MANTECH 2016 - International Conference on Compound Semiconductor Manufacturing Technology
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| URL标识 | 查看原文 |
| 内容类型 | 会议论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2952122 |
| 专题 | 西安交通大学 |
| 推荐引用方式 GB/T 7714 | Jiang, Huaxing,Liu, Chao,Lu, Xing,et al. Suppression of current collapse in AlGaN/GaN MISHEMTs using in-situ SiN gate dielectric and PECVD SiN passivation[C]. 见:. |
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