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浏览/检索结果: 共9条，第1-9条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序作者升序作者降序提交时间升序提交时间降序题名升序题名降序 Ion implantation, annealing diffusion and photoluminescence of Er in KTiOAsO_4 crystals 期刊论文 Nuclear Instruments and Methods in Physics Research, Section B. Beam Interactions with Materials and Atoms, 2013, 页码: 442-445 作者:  Liang-Ling Wang;  Xiao-Jun Cui 收藏  |  浏览/下载：1/0  |  提交时间：2019/12/23 Erbium  Ion implantation  Photoluminescence   Photoluminescence investigation of erbium-implanted in KTiOPO_4 and RbTiOPO_4 期刊论文 Nuclear Instruments and Methods in Physics Research, Section B. Beam Interactions with Materials and Atoms, 2013, 页码: 482-485 作者:  Jing Guan;  Lei Wang;  Gang Fu;  Shiling Li 收藏  |  浏览/下载：1/0  |  提交时间：2019/12/23 KTiOPO_4  RbTiOPO_4  Erbium  Ion implantation  Photoluminescence   Photoluminescence investigation of erbium-implanted in KTiOPO4 and RbTiOPO4 期刊论文 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2013, 卷号: 307, 页码: 482-485 作者:  Guan, Jing;  Wang, Lei;  Fu, Gang;  Li, Shiling 收藏  |  浏览/下载：7/0  |  提交时间：2019/12/23 KTiOPO4  RbTiOPO4  Erbium  Ion implantation  Photoluminescence   Ion implantation, annealing diffusion and photoluminescence of Er in KTiOAsO4 crystals 期刊论文 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2013, 卷号: 307, 页码: 442-445 作者:  Wang, Liang-Ling;  Cui, Xiao-Jun 收藏  |  浏览/下载：1/0  |  提交时间：2019/12/23 Erbium  Ion implantation  Photoluminescence   Formation of a highly Erbium doped silicon-on-insulator layer by introducing SiOx on or into a silicon surface 期刊论文 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2012, 卷号: 278, 页码: 1-3 作者:  Qin, Xi-Feng;  Ji, Zi-Wu;  Chen, Ming;  Liu, Xiu-Hong;  Wang, Xue-Lin 收藏  |  浏览/下载：1/0  |  提交时间：2019/12/23 Silicon-on-insulator  Erbium ion implantation  Heterostructure  Annealing behavior  Rutherford backscattering technique   Formation of a highly Erbium doped silicon-on-insulator layer by introducing SiO _x on or into a silicon surface 期刊论文 Nuclear Instruments and Methods in Physics Research, Section B. Beam Interactions with Materials and Atoms, 2012, 页码: 1-3 作者:  Qin, X.-F.;  Ji, Z.-W.;  Chen, M.;  Liu, X.-H.;  Wang, X.-L. 收藏  |  浏览/下载：5/0  |  提交时间：2019/12/23 Annealing behavior  Erbium ion implantation  Heterostructure  Rutherford backscattering technique  Silicon-on-insulator   Investigation of the lateral spread of erbium ions implanted in silicon crystal 期刊论文 Chinese Physics B, 2010, 卷号: 19, 期号: 11, 页码: 340-343 作者:  Qin XF(秦希峰);  Chen M(陈明);  Wang XL(王雪林);  Liang Y(梁毅);  Zhang SM(张少梅) 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/26 erbium ion implantation  silicon  Rutherford backscattering technique  lateral spread   1.54 μm Photoluminescence emission at room-temperature of erbium-implanted lithium niobate crystal 期刊论文 Journal of the Korean Physical Society, 2008, 卷号: 52, 期号: SUPPL. 1, 页码: S5-S7 作者:  Fu G.;  Li S.L.;  Wang X.L.;  Chen F.;  Wang K.M. 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/26 Erbium  Ion implantation  Lithium niobate crystal  Photoluminescence   Infrared emission from Si implanted with high Er concentration 期刊论文 中国物理英文版, 2001 Xiao, ZS; Xu, F; Zhang, TH; Cheng, GA; Xie, DT; Gu, LL 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/11 erbium  silicon  ion implantation  photoluminescence  LIGHT-EMISSION  SILICON