×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
清华大学 [8]
西安交通大学 [4]
北京大学 [3]
西安理工大学 [2]
厦门大学 [1]
北京航空航天大学 [1]
更多...
内容类型
期刊论文 [25]
会议论文 [1]
发表日期
2018 [1]
2017 [2]
2016 [1]
2015 [1]
2014 [2]
2013 [2]
更多...
学科主题
701.1 elec... [1]
光电子学 [1]
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共26条,第1-10条
帮助
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
发表日期升序
发表日期降序
作者升序
作者降序
提交时间升序
提交时间降序
题名升序
题名降序
Study of high breakdown voltage GaN-based current-aperture vertical electron transistor with source-connected field-plates for power applications
期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2018, 卷号: 33
作者:
Wang, Haiyong
;
Mao, Wei
;
Cong, Guanyu
;
Wang, Xiaofei
;
Du, Ming
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/11/19
source-connected field-plates
breakdown voltage
specific on-resistance
GaN-based CAVET
power device
The Influence of the multilayer ZnO-HfOx structure on the characteristics of a lightemitting device
期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2017, 卷号: 32
作者:
Liu, Lingguang
;
Zhang, Xiaoning
;
Yu, Bojiang
;
Lin, Yuanyuan
;
Zhang, He
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/11/26
dielectric breakdown
ZnO-HfOx
light emitting device
broad band light
Study of the Lifetime of High-Power GaAs PCSSs Under Different Energy Storage Modes
期刊论文
2017, 卷号: 32, 页码: 4644-4651
作者:
Ma, Cheng
;
Yang, Lei
;
Wang, Shaoqiang
;
Ji, Yu
;
Zhang, Lin
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/12/20
Power semiconductor switches
semiconductor device breakdown
semiconductor device reliability
semiconductor device thermal factors
semiconductor switches
Influence of field plate terminal on the electric field distribution and breakdown characteristics of diamond SBD
期刊论文
Faguang Xuebao/Chinese Journal of Luminescence, 2016, 卷号: 37, 期号: [db:dc_citation_issue], 页码: 432-438
作者:
Wang, Jin-Jun
;
Wang, Xiao-Liang
;
Zhang, Jing-Wen
;
Wang, Xia
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/12/02
Breakdown characteristics
Device simulations
Electric field distributions
Field plates
Field-plate structures
Insulating layers
Numerical simulated
Schottky Barrier Diode(SBD)
Research on the Failure Mechanism of High-Power GaAs PCSS
期刊论文
2015, 卷号: 30, 页码: 2427-2434
作者:
Shi, Wei
;
Ma, Cheng
;
Li, Mengxia
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/20
Power semiconductor switches
semiconductor device breakdown
semiconductor device reliability
semiconductor device thermal factors
semiconductor switches
A Computer-Controlled In Situ Analysis Instrument Based on Laser Induced Breakdown Spectroscopy
期刊论文
Applied Mechanics and Materials, 2014, 卷号: Vol.556-562, 页码: 561-566
作者:
Wang, Jie
;
Xu, Mingjun
;
Shi, Linli
;
Shi, Qi
;
Wang, Yongchao
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/03/26
Drilling
Fluid
Laser
Induced
Breakdown
Spectroscopy
Portable
LIBS
Device
Modeling, fabrication and measurement of a novel CMOS UV/blue-extended photodiode
期刊论文
JOURNAL OF CENTRAL SOUTH UNIVERSITY, 2014, 卷号: 21, 页码: 3821-3827
作者:
Chen Chang-ping[1]
;
Zhao Yong-jia[2]
;
Zhou Xiao-ya[3]
;
Jin Xiang-liang[4]
;
Yang Hong-jiao[5]
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/04/30
device simulation
numerical modeling
ultraviolet responsivity
photoelectric characteristics
avalanche breakdown voltage
silicon
A novel method to detect bad data injection attack in smart grid
会议论文
作者:
Liu, Ting
;
Gu, Yun
;
Wang, Dai
;
Gui, Yuhong
;
Guan, Xiaohong
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/10
Adaptive partitioning
Bad data
Bad data detections
Device breakdown
Large system
Power System
security
Smart grid
Logarithm Cofactor Difference Extrema Method of MOSFET's Post-Breakdown Current and Application to Parameter Extraction
期刊论文
JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE, 2013, 卷号: 10, 页码: 669-672
作者:
Shi, Min
;
He, Hongyu
;
Zhang, Guoan
;
Chen, Qin
;
Wang, Cheng
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2020/01/06
Logarithm Cofactor Difference Extrema
MOS Device
Post-Breakdown Current
Parameter Extraction
Multifunctional silicon-based light emitting device in standard complementary metal-oxide-semiconductor technology
期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 1, 页码: article no.18503
作者:
Dong Z
;
Huang BJ
收藏
  |  
浏览/下载:51/2
  |  
提交时间:2011/07/05
optoelectronic integrated circuit
complementary metal-oxide-semiconductor technology
silicon-based light emitting device
electroluminescence
AVALANCHE BREAKDOWN
PHOTON-EMISSION
CURRENT-DENSITY
DIODES
MODEL
ELECTROLUMINESCENCE
SUPERLATTICES
EFFICIENCY
JUNCTIONS
LEDS
©版权所有 ©2017 CSpace - Powered by
CSpace