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厦门大学 [7]
半导体研究所 [6]
北京大学 [4]
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清华大学 [2]
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期刊论文 [34]
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Controlling Light, Heat, and Vibrations in Plasmonics and Phononics
期刊论文
ADVANCED OPTICAL MATERIALS, 2020
作者:
Cunha, Joao
;
Guo, Tian-Long
;
Della Valle, Giuseppe
;
Koya, Alemayehu Nana
;
Proietti Zaccaria, Remo
收藏
  |  
浏览/下载:90/0
  |  
提交时间:2020/12/16
INTRABAND OPTICAL CONDUCTIVITY
ELECTRON-ELECTRON SCATTERING
THERMAL-CONDUCTIVITY
ACOUSTIC VIBRATIONS
DEFORMATION POTENTIALS
GOLD NANOPARTICLES
ENERGY-DISSIPATION
LATTICE-DYNAMICS
TRANSPORT
SILICON
Interactions between coherent twin boundaries and phase transition of iron under dynamic loading and unloading
期刊论文
JOURNAL OF APPLIED PHYSICS, 2017
Wang, Kun
;
Chen, Jun
;
Zhang, Xueyang
;
Zhu, Wenjun
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2017/12/03
HIGH-PRESSURE
MOLECULAR-DYNAMICS
DEFORMATION MECHANISMS
NANOTWINNED METALS
SINGLE-CRYSTALS
TRANSFORMATION
STRAIN
STRESS
NANOPILLARS
POTENTIALS
Investigation of Hole Mobility in Strained InSb Ultrathin Body pMOSFETs
期刊论文
ieee电子器件汇刊, 2015
Chang, Pengying
;
Liu, Xiaoyan
;
Zeng, Lang
;
Wei, Kangliang
;
Du, Gang
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/10
Hole mobility
InSb
modeling
MOSFETs
scattering
self-consistent
six-band k . p
ultrathin body (UTB)
V COMPOUND SEMICONDUCTORS
INVERSION-LAYER MOBILITY
DEFORMATION POTENTIALS
SURFACE ORIENTATION
QUANTUM-WELLS
ON-INSULATOR
BAND
THICKNESS
PHYSICS
Hole mobility in InSb-based devices: Dependence on surface orientation, body thickness, and strain
其他
2015-01-01
Chang, Pengying
;
Liu, Xiaoyan
;
Zeng, Lang
;
Du, Gang
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/03
Surface orientation
Strain
Hole mobility
InSb
III-V semiconductor
Modeling
V COMPOUND SEMICONDUCTORS
DEFORMATION POTENTIALS
INVERSION-LAYERS
Hole mobility in InSb-based devices: Dependence on surface orientation, body thickness, and strain
期刊论文
44th European Solid-State Device Research Conference (ESSDERC), 2015
Chang, Pengying
;
Liu, Xiaoyan
;
Zeng, Lang
;
Du, Gang
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2017/12/03
Surface orientation
Strain
Hole mobility
InSb
III-V semiconductor
Modeling
V COMPOUND SEMICONDUCTORS
DEFORMATION POTENTIALS
INVERSION-LAYERS
Atomistic investigation of the annihilation of non-screw dislocation dipoles in Al, Cu, Ni and gamma-TiAl
期刊论文
Modelling and Simulation in Materials Science and Engineering, 2013, 卷号: 21, 期号: 2
H. Wang
;
D. S. Xu
;
D. Rodney
;
P. Veyssiere
;
R. Yang
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2013/12/24
copper single-crystals
activation-relaxation technique
interatomic
potentials
faulted dipoles
fcc metals
deformation
equilibrium
dynamics
clusters
heights
Research on liquefaction characteristics of saturated undisturbed loess under different level of liquefaction
会议论文
2nd International Conference on Civil, Architectural and Hydraulic Engineering, ICCAHE 2013, Zhuhai, China, July 27, 2013 - July 28, 2013
作者:
Wang, Qian
;
Wang, Lan Min
;
Liu, Hong Mei
;
Wang, Jun
;
Dong, Lin
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2017/01/18
Soil liquefaction
Civil engineering
Deformation
Elastoplasticity
Fluid mechanics
Pore pressure
Pressure distribution
Sediments
Shore protection
Viscoelasticity
Evaluation results
Laboratory experiments
Liquefaction potentials
Loess liquefaction
Pore-water pressures
Residual deformation
Undisturbed loess
Visco elastic plastics
Stress Control in GaN Grown on 6H-SiC by Metalorganic Chemical Vapor Deposition
期刊论文
CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 4
Chen, Y
;
Jiang, Y
;
Xu, PQ
;
Ma, ZG
;
Wang, XL
;
Wang, L
;
Jia, HQ
;
Chen, H
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2013/09/24
PHONON DEFORMATION POTENTIALS
OPTICAL-PROPERTIES
RAMAN-SCATTERING
GALLIUM NITRIDE
BUFFER LAYERS
STRAIN
ALN
FILMS
HETEROSTRUCTURES
PHOTOLUMINESCENCE
Interface effect on the electronic structure and optical properties of InAs/GaSb superlattices
期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 42, 页码: 425103
Lang, XL
;
Xia, JB
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  |  
浏览/下载:107/0
  |  
提交时间:2012/01/06
GASB SUPER-LATTICE
SEMICONDUCTOR HETEROSTRUCTURES
DEFORMATION POTENTIALS
II SUPERLATTICES
BAND PARAMETERS
DETECTORS
APPROXIMATION
TRANSITIONS
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer
期刊论文
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 464-467
作者:
Pan X
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  |  
浏览/下载:82/5
  |  
提交时间:2011/07/05
Sandwich structure
Stress
Aluminum nitride
Gallium nitride
Silicon
PHONON DEFORMATION POTENTIALS
WURTZITE ALN
SILICON
STRESS
TRANSISTORS
EPITAXY
LAYERS
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