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Effect of geometry error on accuracy of large-diameter pads used for CMP dressing
期刊论文
International Journal of Advanced Manufacturing Technology, 2019, 卷号: 100, 页码: 1505-1520
作者:
Ban, X.X.
;
Zhao, H.Y.
;
Zhao, S.J.
;
Xie, R.Q.
;
Gu, Y.W.
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浏览/下载:14/0
  |  
提交时间:2019/11/19
Chemical mechanical polishing(CMP)
Geometry errors
Measured values
Polishing pads
Polyurethane pads
Profile accuracies
Spherical surface
Surface profiles
Atomistic mechanisms of Cu CMP in aqueous H2O2: Molecular dynamics simulations using ReaxFF reactive force field
期刊论文
COMPUTATIONAL MATERIALS SCIENCE, 2018, 卷号: 155, 页码: 476-482
作者:
Guo, Xiaoguang
;
Wang, Xiaoli
;
Jin, Zhuji
;
Kang, Renke
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  |  
浏览/下载:5/0
  |  
提交时间:2019/12/02
Copper
Chemical mechanical polishing (CMP)
ReaxFF reactive force field
Polishing pressure
Improvement and application of pad conditioning accuracy in chemical mechanical polishing
期刊论文
Optical Engineering, 2018, 卷号: 57
作者:
Ban, Xinxing
;
Zhao, Huiying
;
Zhu, Xueliang
;
Zhao, Shijie
;
Xie, Ruiqing
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  |  
浏览/下载:5/0
  |  
提交时间:2019/11/26
Application process
Chemical mechanical polishing(CMP)
Density distributions
Diamond conditioners
Kinematic Analysis
Optical processing
Planarity
Process parameters
Material removal model of ultrasonic elliptical vibration-assisted chemical mechanical polishing for hard and brittle materials
期刊论文
International Journal of Advanced Manufacturing Technology, 2017, 卷号: 92, 期号: 1-4, 页码: 81-99
作者:
Liu, Defu*
;
Yan, Riming
;
Chen, Tao
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  |  
浏览/下载:12/0
  |  
提交时间:2019/12/03
Ultrasonic elliptical vibration (UEV)
Chemical mechanical polishing (CMP)
Material removal rate (MRR)
Hard and brittle materials
CMP behavior of alumina/metatitanic acid core-shell abrasives on sapphire substrates
期刊论文
PRECISION ENGINEERING-JOURNAL OF THE INTERNATIONAL SOCIETIES FOR PRECISION ENGINEERING AND NANOTECHNOLOGY, 2017, 卷号: 50, 页码: 263-268
作者:
Wang, Xin[1]
;
Lei, Hong[2]
;
Chen, Ruling[3]
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  |  
浏览/下载:3/0
  |  
提交时间:2019/04/24
Chemical mechanical polishing (CMP)
alpha-Al2O3/TiO(OH)(2) core-shell abrasives
Sapphire
Mechanism
Nd3+-doped colloidal SiO2 composite abrasives: Synthesis and the effects on chemical mechanical polishing (CMP) performances of sapphire wafers
期刊论文
APPLIED SURFACE SCIENCE, 2017, 卷号: 413, 页码: 16-26
作者:
Liu, Tingting[1]
;
Lei, Hong[2]
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浏览/下载:9/0
  |  
提交时间:2019/04/24
Nd3+-doped colloidal SiO2 composite abrasives
Chemical mechanical polishing (CMP)
Sapphire
Material removal rate (MRR)
Preparation of Mg-Doped Colloidal Silica Abrasives and Their Chemical Mechanical Polishing Performances on Sapphire
期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2016, 卷号: 16, 页码: 9951-9957
作者:
Ma, Pan[1]
;
Lei, Hong[2]
;
Chen, Ruling[3]
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浏览/下载:4/0
  |  
提交时间:2019/04/26
Chemical Mechanical Polishing (CMP)
Sapphire
Mg-Doped Colloidal Silica Abrasives
Material Removal Rate
Process parameters optimisation for Si3N4 in chemical-mechanical polishing via Taguchi technique
期刊论文
International Journal of Nanomanufacturing, 2016, 卷号: Vol.12 No.2, 页码: 143-153
作者:
Wan, Lin-Lin
;
Deng, Zhao-Hui
;
Wang, Chao-Deng
;
Liu, Wei
;
Liu, Zhi-Jian
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  |  
浏览/下载:10/0
  |  
提交时间:2019/12/31
chemical-mechanical polishing
CMP
rotary curved surfaces
parameter optimisation
Taguchi methods
silicon nitride
Si3N4
process parameters
robust design
signal to noise ratio
SNR
analysis of variance
ANOVA
slurry concentration
slurry flow rate
polishing wheel speed
surface roughness
surface quality.
Effects of Polishing Parameters on Evolution of Different Wafer Patterns During Cu CMP
期刊论文
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 2015, 卷号: 28, 期号: 1, 页码: 106-116
作者:
Wu, Lixiao
;
Yan, Changfeng
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  |  
浏览/下载:15/0
  |  
提交时间:2019/11/15
Polishing parameters
wafer patterns
chemical mechanical polishing (CMP)
linear system
contact pressure
Effects of polishing parameters on evolution of different wafer patterns during Cu CMP
期刊论文
IEEE Transactions on Semiconductor Manufacturing, 2015, 卷号: 28, 期号: 1, 页码: 106-116
作者:
Wu, Lixiao
;
Yan, Changfeng
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  |  
浏览/下载:0/0
  |  
提交时间:2020/11/14
Copper
Elastic moduli
Erosion
Linear systems
Polishing
Topography
Chemical mechanical polishing(CMP)
Contact pressures
High selectivity
Polishing parameters
Polishing processs
Preston coefficients
Selectivity ratio
Wafer patterns
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