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浏览/检索结果: 共7条，第1-7条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序作者升序作者降序提交时间升序提交时间降序题名升序题名降序 Mechanism Analysis of the Flashover Quenching the Photoconductive Semiconductor Switch in SF6 期刊论文 IEEE TRANSACTIONS ON PLASMA SCIENCE, 2012, 卷号: 40, 期号: [db:dc_citation_issue], 页码: 2221-2224 作者:  Shi, Wei;  Jiang, Zenggong 收藏  |  浏览/下载：5/0  |  提交时间：2019/12/10 photon-activated charge domain (PACD)  Flashover  photoconductive semiconductor switch (PCSS)  secondary electron emission  semi-insulating GaAs   Mechanism Analysis of the Flashover Quenching the Photoconductive Semiconductor Switch in SF6 期刊论文 2012, 卷号: 40, 页码: 2221-2224 作者:  Shi, Wei;  Jiang, Zenggong 收藏  |  浏览/下载：5/0  |  提交时间：2019/12/20 Flashover  photoconductive semiconductor switch (PCSS)  photon-activated charge domain (PACD)  secondary electron emission  semi-insulating GaAs   Experimental Research on Inhibition of Surface Flashover Based on High Power Gallium Arsenide Photoconductive Switches Triggered by Laser 期刊论文 PLASMA SCIENCE & TECHNOLOGY, 2011, 卷号: 13, 期号: [db:dc_citation_issue], 页码: 672-675 作者:  Xu Ming;  Shi Wei;  Jiang Zenggong;  Wang Shaoqiang;  Fu Zhanglong 收藏  |  浏览/下载：6/0  |  提交时间：2019/12/10 GaAs  longevity  photoconductive switches  photo-activated charge domain   Experimental Research on Inhibition of Surface Flashover Based on High Power Gallium Arsenide Photoconductive Switches Triggered by Laser 期刊论文 2011, 卷号: 13, 页码: 672-675 作者:  Xu, Ming;  Shi, Wei;  Jiang, Zenggong;  Wang, Shaoqiang;  Fu, Zhanglong 收藏  |  浏览/下载：5/0  |  提交时间：2019/12/20 GaAs  photoconductive switches  photo-activated charge domain  longevity   Comparison between gradient-doping GaAs photocathode and uniform-doping GaAs photocathode 期刊论文 applied optics, 2007, 卷号: 46, 期号: 28, 页码: 7035-7039 Yang Z (Yang Zhi); Chang B (Chang Benkang); Zou J (Zou Jijun); Qiao J (Qiao Jianliang); Gao P (Gao Pin); Zeng Y (Zeng Yiping); Li H (Li Hui) 收藏  |  浏览/下载：51/0  |  提交时间：2010/03/29 ACTIVATED GAAS   Thermal stress analysis for GaInAsP multiple quantum well wafer chemically bonded to Si (100) 期刊论文 journal of applied physics, 2006, 卷号: 100, 期号: 2, 页码: art.no.023513 Zhao HQ (Zhao Hong-Quan); Yu LJ (Yu Li-Juan); Huang YZ (Huang Yong-Zhen) 收藏  |  浏览/下载：35/0  |  提交时间：2010/04/11 ACTIVATED BONDING METHOD  ROOM-TEMPERATURE  EPITAXIAL OVERGROWTHS  SURFACE  CRYSTAL  GAAS  TECHNOLOGY  ENERGY  FILMS   Microcosmic condition and macroscopically control method of nonlinear mode of GaAs photoconductive switch 会议论文 Conference on Optoelectronic Devices and Integration, Beijing, PEOPLES R CHINA, 2004-11-08 作者:  Shi, W;  Hou, L;  Dai, HY;  Li, MX 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/25 photoconductive switches (PCSS)  GaAs  lock-on effect  optically activated charge domain