| Mechanism Analysis of the Flashover Quenching the Photoconductive Semiconductor Switch in SF6 | |
| Shi, Wei; Jiang, Zenggong | |
| 2012 | |
| 卷号 | 40页码:2221-2224 |
| 关键词 | Flashover photoconductive semiconductor switch (PCSS) photon-activated charge domain (PACD) secondary electron emission semi-insulating GaAs |
| ISSN号 | 0093-3813 |
| DOI | 10.1109/TPS.2012.2207408 |
| URL标识 | 查看原文 |
| WOS记录号 | WOS:000308659600017 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/5024424 |
| 专题 | 西安理工大学 |
| 推荐引用方式 GB/T 7714 | Shi, Wei,Jiang, Zenggong. Mechanism Analysis of the Flashover Quenching the Photoconductive Semiconductor Switch in SF6[J],2012,40:2221-2224. |
| APA | Shi, Wei,&Jiang, Zenggong.(2012).Mechanism Analysis of the Flashover Quenching the Photoconductive Semiconductor Switch in SF6.,40,2221-2224. |
| MLA | Shi, Wei,et al."Mechanism Analysis of the Flashover Quenching the Photoconductive Semiconductor Switch in SF6".40(2012):2221-2224. |
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