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中国科学院大学 [1]
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期刊论文 [7]
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2011 [2]
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SEU sensitivity and large spacing TMR efficiency of Kintex-7 and Virtex-7 FPGAs
期刊论文
SCIENCE CHINA-INFORMATION SCIENCES, 2022, 卷号: 65, 期号: 2, 页码: 2
作者:
Cai, Chang
;
Ning, Bingxu
;
Fan, Xue
;
Liu, Tianqi
;
Ke, Lingyun
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浏览/下载:65/0
  |  
提交时间:2021/12/09
Design and verification of multiple SEU mitigated circuits on SRAM-based FPGA system
期刊论文
MICROELECTRONICS RELIABILITY, 2021, 卷号: 126, 页码: 7
作者:
Yu, Jian
;
Cai, Chang
;
Ning, Bingxu
;
Gao, Shuai
;
Liu, Tianqi
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  |  
浏览/下载:25/0
  |  
提交时间:2022/01/24
Heavy ions
Irradiation
Hardened
Single event upset
Measurement and evaluation of the Single Event Effects of high-performance SerDes circuits
期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2021, 卷号: 1012, 页码: 11
作者:
Wang, Shu
;
Cai, Chang
;
Ning, Bingxu
;
He, Ze
;
Huang, Zhiqin
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  |  
浏览/下载:18/0
  |  
提交时间:2021/12/08
SerDes
SRAM-based FPGA
Single Event Upset
Single Event Functional Interrupt
Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 4, 页码: 702-709
作者:
Zheng, QW (Zheng, Qiwen)[ 1 ]
;
Cui, JW (Cui, Jiangwei)[ 1 ]
;
Xu, LW (Xu, Liewei)[ 2 ]
;
Ning, BX (Ning, Bingxu)[ 3 ]
;
Zhao, K (Zhao, Kai)[ 3 ]
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  |  
浏览/下载:98/0
  |  
提交时间:2019/05/14
Back-gate biasing
forward body bias (FBB)
total ionizing dose (TID)
ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI)
Anomalous electrical properties induced by hot-electron-injection in 130-nm partially depleted soi nmosfets fabricated on modified wafer
期刊论文
Ieee transactions on nuclear science, 2016, 卷号: 63, 期号: 5, 页码: 2731-2737
作者:
Dai, Lihua
;
Bi, Dawei
;
Ning, Bingxu
;
Hu, Zhiyuan
;
Song, Lei
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  |  
浏览/下载:59/0
  |  
提交时间:2019/05/09
Buried oxide
Interface trap
Silicon ion implantation
Soi nmosfets
Total dose radiation
Gate length dependence of the shallow trench isolation leakage current in an irradiated deep submicron NMOSFET
期刊论文
Journal of Semiconductors., 2011, 卷号: 32, 期号: 6
Liu, ZL
;
Hu, ZY
;
Zhang, ZX
;
Shao, Hua
;
Chen, M
;
Bi, Dawei
;
Ning, Bingxu
;
Zou, SC
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  |  
浏览/下载:27/0
  |  
提交时间:2012/08/28
Influence of poly region extended into field oxide on total ionizing dose effect for deep submicron MOSFET
期刊论文
Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS.RADECS 2011 - 12th European Conference on Radiation and Its Effects on Component and Systems, Conference Proceedings, 2011, 期号: 0, 页码: 28-35
Liu, ZL
;
Hu, ZY
;
Zhang, ZX
;
Shao, H
;
Ning, Bingxu
;
Chen, M
;
Bi, Dawei
;
Zou, SC
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  |  
浏览/下载:26/0
  |  
提交时间:2012/08/28
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