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CORC

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Succession of functional bacteria in a denitrification desulphurisation system under mixotrophic conditions 期刊论文
ENVIRONMENTAL RESEARCH, 2020, 卷号: 188, 页码: 1-17
作者:  Liu, Qian;  Huang, Cong;  Chen, Xueqi;  Wu, Yiping;  Lv, Sihao
收藏  |  浏览/下载：14/0  |  提交时间：2021/09/15
Enhanced performance and microbial community analysis of bioelectrochemical system integrated with bio-contact oxidation reactor for treatment of wastewater containing azo dye 期刊论文
SCIENCE OF THE TOTAL ENVIRONMENT, 2018, 卷号: 634, 页码: 616-627
作者:  Wang, Youzhao;  Pan, Yuan;  Zhu, Tong;  Wang, Aijie;  Lu, Yalun
收藏  |  浏览/下载：32/0  |  提交时间：2019/06/21
A new method to determine the 2DEG density distribution for passivated AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 113, 页码: 160-168
作者:  Fu, Chen;  Lin, Zhaojun;  Cui, Peng;  Lv, Yuanjie;  Zhou, Yang
收藏  |  浏览/下载：5/0  |  提交时间：2019/12/11
Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors 期刊论文
SCIENTIFIC REPORTS, 2018, 卷号: 8
作者:  Cui, Peng;  Lv, Yuanjie;  Liu, Huan;  Cheng, Aijie;  Fu, Chen
收藏  |  浏览/下载：7/0  |  提交时间：2019/12/11
The influence of the PCF scattering on the electrical properties of the AlGaN/AlN/GaN HEMTs after the Si3N4 surface passivation 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2018, 卷号: 124, 期号: 4
作者:  Fu, Chen;  Lin, Zhaojun;  Cui, Peng;  Lv, Yuanjie;  Zhou, Yang
收藏  |  浏览/下载：6/0  |  提交时间：2019/12/11
Effect of Polarization Coulomb Field Scattering on Electrical Properties of the 70-nm Gate-Length AlGaN/GaN HEMTs 期刊论文
SCIENTIFIC REPORTS, 2018, 卷号: 8
作者:  Cui, Peng;  Lv, Yuanjie;  Fu, Chen;  Liu, Huan;  Cheng, Aijie
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/11
Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors 期刊论文
SCIENTIFIC REPORTS, 2018, 卷号: 8
作者:  Cui, Peng;  Mo, Jianghui;  Fu, Chen;  Lv, Yuanjie;  Liu, Huan
收藏  |  浏览/下载：1/0  |  提交时间：2019/12/11
The influence of the PCF scattering on the electrical properties of the AlGaN/AlN/GaN HEMTs after the Si3N4surface passivation 期刊论文
Applied Physics A: Materials Science and Processing, 2018, 卷号: 124, 期号: 4
作者:  Fu, Chen;  Lin, Zhaojun;  Cui, Peng;  Lv, Yuanjie;  Zhou, Yang
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/11
Removal of azo dye in an up-flow membrane-less bioelectrochemical system integrated with bio-contact oxidation reactor 期刊论文
CHEMICAL ENGINEERING JOURNAL, 2017, 卷号: 326, 期号: 0, 页码: 454-461
作者:  Zhu, Tong;  Zhang, Kuo;  Li, Xianjin;  Wu, Zongting;  Lv, Liting
收藏  |  浏览/下载：29/0  |  提交时间：2018/07/29
Influence of Different Gate Biases and Gate Lengths on Parasitic Source Access Resistance in AlGaN/GaN Heterostructure FETs 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 卷号: 64, 期号: 3, 页码: 1038-1044
作者:  Cui, Peng;  Liu, Huan;  Lin, Wei;  Lin, Zhaojun;  Cheng, Aijie
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/11

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