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	The influence of the PCF scattering on the electrical properties of the AlGaN/AlN/GaN HEMTs after the Si3N4 surface passivation
	Fu, Chen; Lin, Zhaojun; Cui, Peng; Lv, Yuanjie; Zhou, Yang; Dai, Gang; Luan, Chongbiao; Liu, Huan; Cheng, Aijie
刊名	APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
	2018
卷号	124期号:4
DOI	10.1007/s00339-018-1702-6
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4566844
专题	山东大学
作者单位	1.Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China. 2.Hebei Semicond Res Inst,
推荐引用方式 GB/T 7714	Fu, Chen,Lin, Zhaojun,Cui, Peng,et al. The influence of the PCF scattering on the electrical properties of the AlGaN/AlN/GaN HEMTs after the Si3N4 surface passivation[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2018,124(4).
APA	Fu, Chen.,Lin, Zhaojun.,Cui, Peng.,Lv, Yuanjie.,Zhou, Yang.,...&Cheng, Aijie.(2018).The influence of the PCF scattering on the electrical properties of the AlGaN/AlN/GaN HEMTs after the Si3N4 surface passivation.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,124(4).
MLA	Fu, Chen,et al."The influence of the PCF scattering on the electrical properties of the AlGaN/AlN/GaN HEMTs after the Si3N4 surface passivation".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 124.4(2018).

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