The influence of the PCF scattering on the electrical properties of the AlGaN/AlN/GaN HEMTs after the Si3N4 surface passivation | |
Fu, Chen; Lin, Zhaojun; Cui, Peng; Lv, Yuanjie; Zhou, Yang; Dai, Gang; Luan, Chongbiao; Liu, Huan; Cheng, Aijie | |
刊名 | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
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2018 | |
卷号 | 124期号:4 |
DOI | 10.1007/s00339-018-1702-6 |
URL标识 | 查看原文 |
公开日期 | [db:dc_date_available] |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4566844 |
专题 | 山东大学 |
作者单位 | 1.Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China. 2.Hebei Semicond Res Inst, |
推荐引用方式 GB/T 7714 | Fu, Chen,Lin, Zhaojun,Cui, Peng,et al. The influence of the PCF scattering on the electrical properties of the AlGaN/AlN/GaN HEMTs after the Si3N4 surface passivation[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2018,124(4). |
APA | Fu, Chen.,Lin, Zhaojun.,Cui, Peng.,Lv, Yuanjie.,Zhou, Yang.,...&Cheng, Aijie.(2018).The influence of the PCF scattering on the electrical properties of the AlGaN/AlN/GaN HEMTs after the Si3N4 surface passivation.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,124(4). |
MLA | Fu, Chen,et al."The influence of the PCF scattering on the electrical properties of the AlGaN/AlN/GaN HEMTs after the Si3N4 surface passivation".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 124.4(2018). |
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