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Single event transient effect of frontside and backside illumination image sensors under proton irradiation
期刊论文
ACTA PHYSICA SINICA, 2022, 卷号: 71, 期号: 5, 页码: 1-9
作者:
Fu, J (Fu Jing) [1] , [2] , [3]
;
Cai, YL (Cai Yu-Long) [4]
;
Li, YD (Li Yu-Dong) [1] , [2]
;
Feng, J (Feng Jie) [1] , [2]
;
Wen, L (Wen Lin) [1] , [2]
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2022/06/06
CMOS image sensor
proton irradiation
single event effect
transientbrightspot
Calibration of the air shower energy scale of the water and air Cherenkov techniques in the LHAASO experiment
期刊论文
PHYSICAL REVIEW D, 2021, 卷号: 104, 期号: 6
作者:
Aharonian, F.
;
An, Q.
;
Axikegu
;
Bai, L. X.
;
Bai, Y. X.
收藏
  |  
浏览/下载:131/0
  |  
提交时间:2021/10/08
Analysis of Dark Signal Degradation Caused by 1 MeV Neutron Irradiation on Backside-Illuminated CMOS Image Sensors
期刊论文
CHINESE JOURNAL OF ELECTRONICS, 2021, 卷号: 30, 期号: 1, 页码: 180-184
作者:
Liu, BK (Liu Bingkai)[ 1,2,3 ]
;
Li, YD (Li Yudong)[ 1,2 ]
;
Wen, L (Wen Lin)[ 1,2 ]
;
Zhou, D (Zhou Dong)[ 1,2 ]
;
Feng, J (Feng Jie)[ 1,2 ]
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2021/05/10
Backside‐
illuminated CMOS image sensors
Dark signal behaviors
Displacement damage effects
Neutron irradiation
A study of hot pixels induced by proton and neutron irradiations in charge coupled devices
期刊论文
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 540-550
作者:
Liu, BK (Liu, Bingkai)[ 1,2,3 ]
;
Li, YD (Li, Yudong)[ 1,2 ]
;
Wen, L (Wen, Lin)[ 1,2 ]
;
Zhou, D (Zhou, Dong)[ 1,2 ]
;
Feng, J (Feng, Jie)[ 1,2 ]
收藏
  |  
浏览/下载:51/0
  |  
提交时间:2020/07/06
Charge coupled devices (CCDs)
proton irradiation
neutron irradiation
hot pixels
displacement damage effects
Single-Event Effects in Pinned Photodiode CMOS Image Sensors: SET and SEL
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 卷号: 67, 期号: 8, 页码: 1861-1868
作者:
Cai, YL (Cai, Yulong)[ 1,2 ]
;
Wen, L (Wen, Lin)[ 3 ]
;
Li, YD (Li, Yudong)[ 3 ]
;
Guo, Q (Guo, Qi)[ 3 ]
;
Zhou, D (Zhou, Dong)[ 3 ]
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2020/09/09
Complementary metal-oxide-semiconductor
(CMOS) image sensors (CIS)
heavy ions
pulsed laser
single-event latchup (SEL)
single-event transient (SET)
Displacement damage effects induced by fast neutron in backside-illuminated CMOS image sensors
期刊论文
JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, 2020, 卷号: 57, 期号: 9, 页码: 1015-1021
作者:
Zhang, X (Zhang, Xiang)[ 1,2,3 ]
;
Li, YD (Li, Yudong)[ 1,2 ]
;
Wen, L (Wen, Lin)[ 1,2 ]
;
Feng, J (Feng, Jie)[ 1,2 ]
;
Zhou, D (Zhou, Dong)[ 1,2 ]
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2020/12/09
14-MeV neutron
neutron irradiation
radiation damage
radiation effect
Study of dark current random telegraph signal in proton-irradiated backside illuminated CMOS image sensors
期刊论文
RESULTS IN PHYSICS, 2020, 卷号: 19, 期号: 12, 页码: 1-7
作者:
Liu, BK (Liu, Bingkai)[ 1,2,3 ]
;
Li, YD (Li, Yudong)[ 1,2 ]
;
Wen, L (Wen, Lin)[ 1,2 ]
;
Zhou, D (Zhou, Dong)[ 1,2 ]
;
Feng, J (Feng, Jie)[ 1,2 ]
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2021/03/19
Backside illuminated CMOS image sensor
Random telegraph signal
Radiation effects
Proton irradiation
Theoretical calculation
Heavy ion-induced single event effects in active pixel sensor array
期刊论文
SOLID-STATE ELECTRONICS, 2019, 卷号: 152, 期号: 2, 页码: 93-99
作者:
Cai, YL (Cai, Yu-Long)[ 1,2,3 ]
;
Guo, Q (Guo, Qi)[ 1,2 ]
;
Li, YD (Li, Yu-Dong)[ 1,2 ]
;
Wen, L (Wen, Lin)[ 1,2 ]
;
Zhou, D (Zhou, Dong)[ 1,2 ]
收藏
  |  
浏览/下载:136/0
  |  
提交时间:2019/01/03
CMOS active pixel sensor (APS)
SEE
Heavy ion
Influence of grain size on tellurium corrosion behaviors of GH3535 alloy
期刊论文
CORROSION SCIENCE, 2019, 卷号: 148, 页码: 110-122
作者:
Jiang, Li[1]
;
Fu, Cai-Tao[2]
;
Leng, Bin[3]
;
Jia, Yan-yan[4]
;
Ye, Xiang-Xi[5]
收藏
  |  
浏览/下载:51/0
  |  
提交时间:2019/04/22
Grain size
Tellurium
Diffusion
Grain boundaries
GH3535 alloy
Melatonin decreases M1 polarization via attenuating mitochondrial oxidative damage depending on UCP2 pathway in prorenin-treated microglia
期刊论文
PLOS ONE, 2019, 卷号: 14, 页码: e0212138
作者:
Hu, Li[1]
;
Zhang, Shutian[2]
;
Wen, Haoyu[3]
;
Liu, Tianfeng[4]
;
Cai, Jian[5]
收藏
  |  
浏览/下载:44/0
  |  
提交时间:2019/04/22
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