Single-Event Effects in Pinned Photodiode CMOS Image Sensors: SET and SEL

doi:10.1109/TNS.2020.3000275

CORC > 新疆理化技术研究所 > 中国科学院新疆理化技术研究所 > 中国科学院特殊环境功能材料与器件重点试验室

	Single-Event Effects in Pinned Photodiode CMOS Image Sensors: SET and SEL
	Cai, YL (Cai, Yulong)[ 1,2 ]; Wen, L (Wen, Lin)[ 3 ]; Li, YD (Li, Yudong)[ 3 ]; Guo, Q (Guo, Qi)[ 3 ]; Zhou, D (Zhou, Dong)[ 3 ]; Feng, J (Feng, Jie)[ 3 ]; Zhang, X (Zhang, Xiang)[ 1,2 ]; Liu, BK (Liu, Bingkai)[ 1,2 ]; Fu, J (Fu, Jing)[ 1,2 ]
刊名	IEEE TRANSACTIONS ON NUCLEAR SCIENCE
	2020
卷号	67 期号:8 页码:1861-1868
关键词	Complementary metal-oxide-semiconductor (CMOS) image sensors (CIS) heavy ions pulsed laser single-event latchup (SEL) single-event transient (SET)
ISSN号	0018-9499
DOI	10.1109/TNS.2020.3000275
英文摘要	Single-event transient (SET) and single-event latchup (SEL) of a 4T pinned photodiode (PPD) complementary metal-oxide-semiconductor (CMOS) image sensor (CIS) fabricated with a 0.18-mu m CMOS process were investigated using heavy ions and a picosecond pulsed laser. The SET bright spot characteristics were further studied, and the transient bright spots formed by laser and heavy ions were analyzed. The sensor exhibited SELs and micro-SEL. To determine the precise sensitive location where SEL occurred in the CIS, a pulsed laser with a 2-mu m beam spot was used to scan the entire surface of the device. The results revealed that SEL occurred in the peripheral circuits of the CIS, including the analog signal processing circuit, row-addressing circuit, and analog-to-digital conversion (ADC). The cross section of the SELs for the sample were measured using a linear energy transfer (LET) ranging from 8.62 to 81.35 MeV.cm(2) mg(-1). The SEL rates in space for the used CIS were predicted using the CREME96 tool.
WOS记录号	WOS:000560649500010
内容类型	期刊论文
源URL	[http://ir.xjipc.cas.cn/handle/365002/7388]
专题	新疆理化技术研究所_中国科学院特殊环境功能材料与器件重点试验室
作者单位	1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China
推荐引用方式 GB/T 7714	Cai, YL ,Wen, L ,Li, YD ,et al. Single-Event Effects in Pinned Photodiode CMOS Image Sensors: SET and SEL[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE,2020,67(8):1861-1868.
APA	Cai, YL .,Wen, L .,Li, YD .,Guo, Q .,Zhou, D .,...&Fu, J .(2020).Single-Event Effects in Pinned Photodiode CMOS Image Sensors: SET and SEL.IEEE TRANSACTIONS ON NUCLEAR SCIENCE,67(8),1861-1868.
MLA	Cai, YL ,et al."Single-Event Effects in Pinned Photodiode CMOS Image Sensors: SET and SEL".IEEE TRANSACTIONS ON NUCLEAR SCIENCE 67.8(2020):1861-1868.