×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
上海大学 [91]
暨南大学 [84]
江苏大学 [59]
华南理工大学 [45]
重庆大学 [43]
河南大学 [14]
更多...
内容类型
期刊论文 [369]
会议论文 [43]
会议 [7]
发表日期
2022 [1]
2021 [4]
2020 [4]
2019 [19]
2018 [62]
2017 [58]
更多...
学科主题
半导体材料 [1]
天文学 [1]
天文学::天体物理学 [1]
天文学::天体物理学... [1]
物理学 [1]
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共419条,第1-10条
帮助
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
发表日期升序
发表日期降序
作者升序
作者降序
提交时间升序
提交时间降序
题名升序
题名降序
Single event transient effect of frontside and backside illumination image sensors under proton irradiation
期刊论文
ACTA PHYSICA SINICA, 2022, 卷号: 71, 期号: 5, 页码: 1-9
作者:
Fu, J (Fu Jing) [1] , [2] , [3]
;
Cai, YL (Cai Yu-Long) [4]
;
Li, YD (Li Yu-Dong) [1] , [2]
;
Feng, J (Feng Jie) [1] , [2]
;
Wen, L (Wen Lin) [1] , [2]
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2022/06/06
CMOS image sensor
proton irradiation
single event effect
transientbrightspot
Calibration of the air shower energy scale of the water and air Cherenkov techniques in the LHAASO experiment
期刊论文
PHYSICAL REVIEW D, 2021, 卷号: 104, 期号: 6
作者:
Aharonian, F.
;
An, Q.
;
Axikegu
;
Bai, L. X.
;
Bai, Y. X.
收藏
  |  
浏览/下载:127/0
  |  
提交时间:2021/10/08
Analysis of Dark Signal Degradation Caused by 1 MeV Neutron Irradiation on Backside-Illuminated CMOS Image Sensors
期刊论文
CHINESE JOURNAL OF ELECTRONICS, 2021, 卷号: 30, 期号: 1, 页码: 180-184
作者:
Liu, BK (Liu Bingkai)[ 1,2,3 ]
;
Li, YD (Li Yudong)[ 1,2 ]
;
Wen, L (Wen Lin)[ 1,2 ]
;
Zhou, D (Zhou Dong)[ 1,2 ]
;
Feng, J (Feng Jie)[ 1,2 ]
收藏
  |  
浏览/下载:34/0
  |  
提交时间:2021/05/10
Backside‐
illuminated CMOS image sensors
Dark signal behaviors
Displacement damage effects
Neutron irradiation
Mechanism of Ionization Damage in Large Eight-Transistor Complementary Metal-Oxide-Semiconductor Color Image Sensors
期刊论文
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2021, 卷号: 16, 期号: 11, 页码: 1755-1761
作者:
Feng, J (Feng, Jie) [1] , [2]
;
Fu, J (Fu, Jing) [1] , [2] , [3]
;
Li, YD (Li, Yu-Dong) [1] , [2]
;
Wen, L (Wen, Lin) [1] , [2]
;
Guo, Q (Guo, Qi) [1] , [2]
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2022/03/24
CMOS Color Image Sensor
Ionization Damage
Radiation-Sensitive Parameters
Radiation Effects and Mechanisms on Switching Characteristics of Silicon Carbide Power MOSFETs
期刊论文
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2021, 卷号: 16, 期号: 9, 页码: 1423-1429
作者:
Feng, HN (Feng, Haonan) [1] , [2] , [3]
;
Yang, S (Yang, Sheng) [1] , [2] , [3]
;
Liang, XW (Liang, Xiaowen) [1] , [2] , [3]
;
Zhang, D (Zhang, Dan) [1] , [2] , [3]
;
Pu, XJ (Pu, Xiaojuan) [1] , [2] , [3]
收藏
  |  
浏览/下载:47/0
  |  
提交时间:2022/03/24
SiC Power MOSFETs
Switching Characteristics
Total Ionizing Dose (TID) Effect
Static Characteristic
Parasitic Capacitance
A study of hot pixels induced by proton and neutron irradiations in charge coupled devices
期刊论文
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 540-550
作者:
Liu, BK (Liu, Bingkai)[ 1,2,3 ]
;
Li, YD (Li, Yudong)[ 1,2 ]
;
Wen, L (Wen, Lin)[ 1,2 ]
;
Zhou, D (Zhou, Dong)[ 1,2 ]
;
Feng, J (Feng, Jie)[ 1,2 ]
收藏
  |  
浏览/下载:49/0
  |  
提交时间:2020/07/06
Charge coupled devices (CCDs)
proton irradiation
neutron irradiation
hot pixels
displacement damage effects
Single-Event Effects in Pinned Photodiode CMOS Image Sensors: SET and SEL
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 卷号: 67, 期号: 8, 页码: 1861-1868
作者:
Cai, YL (Cai, Yulong)[ 1,2 ]
;
Wen, L (Wen, Lin)[ 3 ]
;
Li, YD (Li, Yudong)[ 3 ]
;
Guo, Q (Guo, Qi)[ 3 ]
;
Zhou, D (Zhou, Dong)[ 3 ]
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2020/09/09
Complementary metal-oxide-semiconductor
(CMOS) image sensors (CIS)
heavy ions
pulsed laser
single-event latchup (SEL)
single-event transient (SET)
Displacement damage effects induced by fast neutron in backside-illuminated CMOS image sensors
期刊论文
JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, 2020, 卷号: 57, 期号: 9, 页码: 1015-1021
作者:
Zhang, X (Zhang, Xiang)[ 1,2,3 ]
;
Li, YD (Li, Yudong)[ 1,2 ]
;
Wen, L (Wen, Lin)[ 1,2 ]
;
Feng, J (Feng, Jie)[ 1,2 ]
;
Zhou, D (Zhou, Dong)[ 1,2 ]
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2020/12/09
14-MeV neutron
neutron irradiation
radiation damage
radiation effect
Study of dark current random telegraph signal in proton-irradiated backside illuminated CMOS image sensors
期刊论文
RESULTS IN PHYSICS, 2020, 卷号: 19, 期号: 12, 页码: 1-7
作者:
Liu, BK (Liu, Bingkai)[ 1,2,3 ]
;
Li, YD (Li, Yudong)[ 1,2 ]
;
Wen, L (Wen, Lin)[ 1,2 ]
;
Zhou, D (Zhou, Dong)[ 1,2 ]
;
Feng, J (Feng, Jie)[ 1,2 ]
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2021/03/19
Backside illuminated CMOS image sensor
Random telegraph signal
Radiation effects
Proton irradiation
Theoretical calculation
Heavy ion-induced single event effects in active pixel sensor array
期刊论文
SOLID-STATE ELECTRONICS, 2019, 卷号: 152, 期号: 2, 页码: 93-99
作者:
Cai, YL (Cai, Yu-Long)[ 1,2,3 ]
;
Guo, Q (Guo, Qi)[ 1,2 ]
;
Li, YD (Li, Yu-Dong)[ 1,2 ]
;
Wen, L (Wen, Lin)[ 1,2 ]
;
Zhou, D (Zhou, Dong)[ 1,2 ]
收藏
  |  
浏览/下载:135/0
  |  
提交时间:2019/01/03
CMOS active pixel sensor (APS)
SEE
Heavy ion
©版权所有 ©2017 CSpace - Powered by
CSpace