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长春光学精密机械与物... [1]
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会议论文 [1]
发表日期
2008 [1]
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Temperature characteristics of several familiar diode lasers with broad area (EI CONFERENCE)
会议论文
Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China
Liang X.
;
Qin L.
;
He C.
;
Ma Q.
;
Ning Y.
;
Wang L.
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提交时间:2013/03/25
Temperature characteristics of several familiar high power diode lasers with broad area
whose wavelength was separately 808 nm
810 nm
940 nm and 980 nm
were analyzed. In order to see the effect the change of the quantum well structure on the characteristic temperatures
different structures were attempted. For the 808 nm structure
we tried different barrier thicknesses. For the 810 nm structure
different cavity lengths were attempted. And we studied the 940 nm and 980 nm also. In this paper
the widths of these devices were all 100 m. Characteristic temperatures of these devices were calculated. The appropriate structure was available for different application. 2008 SPIE.
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